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FMBT4401 Datasheet, PDF (3/10 Pages) Formosa MS – 600mA Silicon NPN Epitaxial Planar Transistor
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NPN Epitaxial Planar Transistor
FMBT4401
Formosa MS
Characteristics (AT TA=25oC unless otherwise noted)
Off characteristics
PARAMETER
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage(3)
Emitter-Base breakdown voltage
Base cutoff current
Collector cutoff current
CONDITIONS
Ic = 0.1mA, IE = 0
Ic = 1.0mA, IB = 0
IE = 0.1mA, IC = 0
VCE = 35Vdc, VEB = 0.4 Vdc
VCE = 35Vdc, VEB = 0.4Vdc
On characteristics(3)
PARAMETER
CONDITIONS
Ic = 0.1mA, VCE = 1.0V
Ic = 1.0mA, VCE = 1.0V
DC current gain
Ic = 10mA, VCE = 1.0V
Ic = 150mA, VCE = 1.0V
Ic = 500mA, VCE = 2.0V
Collector-Emitter saturation voltage(3)
Ic = 150mA, IB = 15mA
Ic = 500mA, IB = 50mA
Base-Emitter saturation voltage(3)
Ic = 150mA, IB = 15mA
Ic = 500mA, IB = 50mA
3.Pulse test : pukse width < 300uS, duty cycle < 2.0%.
Small-signal characteristics
PARAMETER
CONDITIONS
Current-gain-bandwidth product(4) IC = 20mA, VCE = 10V, f = 100MHz
Output capacitance
VCB = 5.0V, IE = 0, f = 1.0MHz
Input capacitance
VEB = 0.5V, IC = 0, f = 1.0MHz
Input impedance
VCE = 10mA, IC = 1.0mA, f = 1.0KHz
Voltage feeback radio
VCE = 10V, IC = 1.0mA, f = 1.0KHz
Small-signal current gain
VCE = 10V, IC = 1.0mA, f = 1.0KHz
Output admittance
VCE = 10V, IC = 1.0mA, f = 1.0KHz
4.fT is defined as the frequency at which hfe extrapolates to unity.
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
IBL
ICEX
MIN.
60
40
6.0
TYP. MAX. UNIT
V
V
V
0.1
µA
0.1
Symbol MIN. TYP. MAX. UNIT
20
40
hFE
80
300 -
100
40
VCE(sat)
0.4
Vdc
0.75
VBE(sat)
0.75
0.95
Vdc
1.20
Symbol MIN. TYP. MAX. UNIT
fT
Cobo
Cibo
hie
hre
hfe
250
1.0
0.1
40
MHz
6.5 VpFdc
30 pF
15
k
8.0
X 10-4
500
-
hoe
1.0
30 µmhos
Switching characteristics
PARAMETER
Delay time
Rise time
Storage time
Fall time
CONDITIONS
VCC = 30V, VBE = 2.0Vdc, IC = 150mA, IB1 = 15mA
VCC = 30V, IC =150mA, IB1 = IB2 = 15mA
Symbol MIN. TYP. MAX. UNIT
td
35
tr
35
ns
ts
200
tf
50
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Page 3
Document ID Issued Date
DS-231117 2008/02/10
Revised Date Revision
2010/03/10
B
Page.
10
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