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2N7002W Datasheet, PDF (3/9 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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SMD MOSFET
2N7002W
Formosa MS
Electrical characteristics (AT TA=25oC unless otherwise noted)
PARAMETER
Drain-source breakdown voltage
Drain-source leakage current
Gate-source leakage current-forward
Gate-source leakage current-reverse
Gate threshold voltage*
On-state drain current
Static drain-source on-resistance*
Drain-source on-voltage*
Forward transconductance
Input capacitance
Output capacitance
CONDITIONS
VGS = 0V, ID = 10uA
VDS = 60V, VGS = 0V
VDS = 60V, VGS = 0V, TJ = 125OC
VGSF = 20V
VGSF = -20V
VDS = VGS, ID = 250uA
VDS > 20V , DS(on) VGS = 10V
VGS = 10V, ID = 0.5A
VGS = 10V, ID = 0.5A, TC = 125OC
VGS = 5.0V, ID = 50mA
VGS = 5.0V, ID = 50mA, TC = 125OC
VGS = 10V, ID = 0.5A
VGS = 5.0V, ID = 50mA
VDS > 2.0VDS( , on) ID = 200mA*
VDS = 25V, VGS = 0V, f = 1.0MHz
Reverse transfer capacitance
Turn-On Delay Time
Turn-Off Delay Time
VDD = 25V, ID = 500mA,
Vgen = 10V, RG = 25Ω, RL = 50Ω*
Diode forward on-voltage
Source current continuous
IS = 115mA, VGS = 0V
Body diode
Source current pulsed
*Pules test : Pules width < 300uS, duty cycle < 2%
Symbol
V(BR)DSS
IDSS
IGSS
IGSS
VGS(th)
ID(on)
RDS(on)
VDS(on)
gFS
Ciss
Coss
Crss
td(on)
td(off)
VSD
IS
ISM
MIN.
60
1.0
500
200
TYP.
MAX.
1.0
0.5
100
UNIT
V
uA
mA
nA
-100
nA
2.5
V
mA
7.5
13.5
Ω
7.5
13.5
3.75
V
0.375
ms
50
25
pF
5.0
9
15
ns
21
26
-0.93 -1.2
V
-250
mA
-800
mA
Switching
Test Circuit
Gate Charge
Test Circuit
VGS
VDD
VIN
D
RG
G
RL
VOUT
DUT
S
VDD
VGS
1mA
G
RG
RL
D
S
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Page 3
Document ID Issued Date
DS-251109 2008/02/10
Revised Date Revision
2010/06/10
C
Page.
9
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