R1200F Datasheet, PDF (2/2 Pages) Rectron Semiconductor – HIGH VOLTAGE FAST RECOVERY RECTIFIER (VOLTAGE RANGE 1200 to 2000 Volts CURRENT 0.2 to 0.5 Ampere)

RATING AND CHARACTERISTIC CURVES (R1200F THRU R2500F)
FIG.1 - TYPICAL REVERSE
CHARACTERISTICS
100
10
1.0
.1
Tj=100 C
Tj=25 C
.01
0 20 40 60 80 100 120 140
PERCENTAGE RATED PEAK REVERSE VOLTAGE
FIG.3- TEST CIRCUIT DIAGRAM AND REVERSE
RECOVERY TIME CHARACTERISTICS
50W
NONINDUCTIVE
10W
NONINDUCTIVE
(+)
25Vdc
(approx.)
()
D.U.T.
1W
NON-
INDUCTIVE
OSCILLISCOPE
(NOTE 1)
()
PULSE
GENERATOR
(NOTE 2)
(+)
NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF.
2. Rise Time= 10ns max., Source Impedance= 50 ohms.
+0.5A
0
-0.25A
trr
|
|
|
|
|
|
|
|
-1.0A
1cm
SET TIME BASE FOR
50 / 10ns / cm
FIG.2-TYPICAL FORWARD CURRENT DERATING CURVE
600
500
400
300
200
100
0
0
Single Phase
Half Wave 60Hz
Resistive Or Inductive Load
0.375"(9.5mm) Lead Length
R2000F~R250R0F1200F~R1800F
20 40 60 80 100 120 140 160 180 200
AMBIENT TEMPERATURE ( C)
FIG.4-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
30
24
18
Tj=25 C
8.3ms Single Half
12
Sine Wave
JEDEC method
6
0
1
5
10
50
100
NUMBER OF CYCLES AT 60Hz
140
120
100
80
60
40
20
0
.01
FIG.5-TYPICAL JUNCTION CAPACITANCE
.05 .1
.5 1
5 10
REVERSE VOLTAGE,(V)
50 100