MUR4100 Datasheet, PDF (2/6 Pages) Gulf Semiconductor – GLASS PASSIVATED JUNCTION Ultra fast Plastic Rectifiers VOLTAGE: 1000V CURRENT:4.0A

Axial Leaded Ultra Fast Rectifiers
MUR4100
4.0A Axial Leaded
Ultra Fast Rectifiers-1000V
Features
• Low power loss, high efficiency
• Low leakage
• Low forward voltage drop
• High current capability
• Glass passivated chip junction.
• High speed switching.
• High current surge
• High reliability
• Pb free product : 99% Sn above can meet RoHS
environment substance directive request
• Suffix "-H" indicates Halogen free parts, ex. ΜUR4100-H.
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, DO-201AD
• Terminals : Solderable per MIL-STD-750,Method 2026
• Polarity: Color band denotes cathode end
• Mounting Position : Any
• Weight : Approximated 1.10 gram
Formosa MS
Package outline
DO-201AD
.220(5.6)
.197(5.0)
DIA.
1.0(25.4)
MIN.
.375(9.5)
.285(7.2)
.052(1.3)
.048(1.2)
DIA.
1.0(25.4)
MIN.
Dimensions in inches and (millimeters)
Maximum ratings and Electrical Characteristics (AT T_A=25^oC unless otherwise noted)
PARAMETER
SYMBOLS
MUR4100
UNITS
Maximum repetitive peak reverse voltage
V_RRM
1000
Volts
Maximum RMS voltage
V_RMS
700
Volts
Maximum DC blocking voltage
V_DC
1000
Volts
Average Rectified current at TA=55°C
IF(AV)
4.0
Non-repetitive Peak Forward Surge Current
8.3ms single half sine-wave (JEDEC Method)
I_FSM
125
Amp
Amps
Maximum Forward Voltage @IF=4.0A
V_F
1.85
Maximum DC reverse current
at rated DC blocking voltage ,TJ=25°C
I_R
25.0
Maximum reverse recovery time (Note 1)
t_rr
75
Volts
uA
ns
Maximum forward recovery Time (Note 2)
t_fr
75
ns
Operating Junction Temperature Range
T_J
-65 to +150
°C
Storage Temperature Range
T_STG
Note: 1. Reverse recovery condition IF=0.5A,IR=1.0A,Irr=0.25A
2. Forward recovery condition IF=1.0 A, di/dt=100 A/us, Recovery to 1.0 V.
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Page 2
-65 to +150
°C
Document ID Issued Date
DS-222318 2013/08/23
Revised Date Revision
-
A
Page.
6