HFM101-S Datasheet, PDF (2/7 Pages) Formosa MS – Chip High Effciency Rectifiers

Chip High Effciency Rectifiers
HFM101-S THRU HFM107-S
Formosa MS
1.0A Surface Mount High
Effciency Rectifiers-50-1000V
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
optimize board space.
• High current capability.
• Ultrafast recovery time for high efficiency.
• High surge current capability.
• Glass passivated chip junction.
• Lead-free parts meet RoHS requirments.
• Suffix "-H" indicates Halogen free parts, ex. HFM101-S-H.
Package outline
SMA-S
0.213(5.4)
0.197(5.0)
0.063(1.6)
0.055(1.4)
0.012(0.3) Typ.
0.106(2.7)
0.091(2.3)
Mechanical data
• Epoxy:UL94-V0 rated flame retardant
• Case : Molded plastic, DO-214AC / SMA-S
• Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.05 gram
0.040(1.0) Typ.
0.071(1.8)
0.060(1.5)
0.040 (1.0) Typ.
Dimensions in inches and (millimeters)
Maximum ratings and Electrical Characteristics (AT T_A=25^oC unless otherwise noted)
PARAMETER
CONDITIONS
Symbol MIN. TYP. MAX.
Forward rectified current
See Fig.2
I_O
1.0
UNIT
A
Forward surge current
8.3ms single half sine-wave (JEDEC methode)
I_FSM
30
A
Reverse current
Diode junction capacitance
Storage temperature
V_R = V_RRM T_J = 25^OC
V_R = V_RRM T_J = 125^OC
f=1MHz and applied 4V DC reverse voltage
5.0
I_R
uA
150
C_J
20
pF
T_STG
-65
+175 ^OC
SYMBOLS
V
*
RRM
1
(V)
V
RM
*
S
2
(V)
V
*
R
3
(V)
V
*
F
4
(V)
trr ^*5
(ns)
HFM101-S 50
HFM102-S 100
HFM103-S 200
HFM104-S 400
HFM105-S 600
35
50
70
100
140
200
280
400
420
600
1.00
50
1.30
HFM106-S 800
560
800
1.70
75
HFM107-S 1000 700
1000
Note 1. Reverse recovery time test condition, IF=0.5A, IR=1.0A, IRR=0.25A
Operating
temperature
T_J, (^OC)
-55 to +150
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage@I_F=1.0A
*5 Maximum Reverse recovery time, note 1
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Page 2
Document ID Issued Date
DS-121313 2009/02/10
Revised Date
2010/11/10
Revision
C
Page.
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