FFM101-MH1 Datasheet, PDF (2/7 Pages) Formosa MS – Chip Fast Recovery Rectifiers

Chip Fast Recovery Rectifiers
Formosa MS
FFM101-MH1 THRU FFM107-MH1
1.0A Surface Mount Fast
Recovery Rectifiers-50-1000V
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
optimize board space.
• Tiny plastic SMD package.
• High current capability.
• Fast switching for high efficiency.
• High surge current capability.
• Glass passivated chip junction.
• Lead-free parts meet RoHS requirments.
• Suffix "-H" indicates Halogen-free parts, ex. FFM101-MH1-H.
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H1
• Terminals :Plated terminals, solderable per MIL-STD-750,
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.0103 gram
Package outline
SOD-123H1
0.146(3.7)
0.130(3.3)
0.071(1.8)
0.056(1.4)
0.004(0.1) Typ.
0.031(0.8) Typ.
0.012(0.3) Typ.
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
Maximum ratings and Electrical characteristics (AT T_A=25^oC unless otherwise noted)
PARAMETER
SYMBOLS FFM101-MH1 FFM102-MH1 FFM103-MH1 FFM104-MH1 FFM105-MH1 FFM106-MH1 FFM107-MH1 _UNIT
Maximum repetitive peak reverse voltage
VRRM
50
100
200
400
600
800
1000
V
Maximum RMS voltage
VRMS
35
70
140
280
420
560
700
V
Maximum DC blocking voltage
VDC
50
100
200
400
600
800
1000
V
Maximum average forward rectified current
IO
Peak forward surge current 8.3ms
IFSM
single half sine-wave(JEDEC method)
Maximum forward voltage at IF=1.0A
VF
Maximum DC reverse current TJ =25°C
at rated DC blocking voltage TJ =125°C
IR
Typical thermal resistance junction to ambient RθJA
Typical thermal resistance junction to case
RθJC
Typical junction capacitance (Note 2)
CJ
1.0
A
25
A
1.30
V
5.0
uA
100
uA
73
°C/W
53
°C/W
15
pF
Maximum reverse recovery time (Note 1)
trr
Operating junction temperature range
TJ
Storage temperature range
TSTG
Note 1. Reverse recovery time test condition, IF=0.5A, IR=1.0A, IRR=0.25A
2. Measured at 1 MHz and applied reverse voltage of 4.0 VDC
150
250
-55 to +150
-65 to +175
500
ns
°C
°C
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Page 2
Document ID Issued Date
DS-121211 2014/01/20
Revised Date Revision
-
A
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