EF5A05F Datasheet, PDF (2/6 Pages) Frontier Electronics. – 5.0A GLASS PASSIVATED EFFICIENCY FAST RECTIFIERS-50-600V

Effciency Fast Rectifiers
EF5A05F THRU EF5A60F
Formosa MS
5.0A Glass Passivated
Effciency Fast Rectifiers-50-600V
Features
• Reverse recovery time less than 25ns
• High current capability.
• Low reverse leakage current.
• High surge capability.
• Glass passivated chip junction.
• Low forward drop down voltage.
• High reliability.
• Lead-free parts meet RoHS requirments.
• Suffix "-H" indicates Halogen free parts, ex. ΕF5A05F-H.
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• Case : JEDEC ITO-220AC molded plastic body over
passivated chip
• Lead : Axial leads, solderable per MIL-STD-202,
Method 208 guranteed
• Polarity: As marked
• Mounting Position : Any
• Weight : Approximated 1.70 gram
Package outline
ITO-220AC
0.406(10.3)
0.381(9.7)
0.134(3.4)
0.118(3.0)
1
0.035(0.9)
0.011(0.3)
0.272(6.9)
0.248(6.3)
2
0.161(4.1)MAX
0.189(4.8)
0.165(4.2)
0.130(3.3)
0.099(2.5)
0.606(15.4)
0.583(14.8)
0.548(13.9)
0.512(13.0)
PIN1
PIN2
0.110(2.8)
0.091(2.3)
0.032(0.8)MAX
Dimensions in inches and (millimeters)
Maximum ratings (AT T_A=25^oC unless otherwise noted)
PARAMETER
SYMBOLS EF5A05F
Maximum repetitive peak reverse voltage
VRRM
50
EF5A10F
100
EF5A20F
200
EF5A40F
400
Maximum RMS voltage
VRMS
35
70
140
280
Maximum DC blocking voltage
VDC
50
100
200
400
Maximum average forward rectified current
IO
5.0
Peak forward surge current 8.3ms
single half sine-wave(JEDEC method)
IFSM
Typical diode junction capacitance (Note 1)
CJ
Operating junction temperature range
TJ
Storage temperature range
TSTG
80
30
-55 to +150
-65 to +175
Electrical characteristics (AT T_A=25^oC unless otherwise noted)
PARAMETER
SYMBOLS EF5A05F EF5A10F
EF5A20F EF5A40F
Maximum forward voltage at IF=5.0A
VF
0.98
1.30
Maximum DC reverse current
at rated DC blocking voltage
at TJ =25°C
at TJ =125°C
IR
Maximum reverse recovery time (Note 2)
trr
Thermal characteristics
PARAMETER
SYMBOLS
EF5A05F
EF5A10F
5.0
200
25
EF5A20F EF5A40F
Typical thermal resistance junction to case
RθJC
3.0
Note 1: Measure at 1 MHz and applied reverse voltage of 4.0 V D.C.
Note 2: Reverse recovery time test condition, IF=0.5A, IR=1.0A, IRR=0.25A
EF5A60F UNIT
600
V
420
V
600
V
A
A
pF
°C
°C
EF5A60F UNIT
1.75
V
uA
uA
ns
EF5A60F UNIT
°C/W
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Page 2
Document ID
DS-222504
Issued Date
2008/02/10
Revised Date
2015/07/06
Revision
C
Page.
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