EF10A05F Datasheet, PDF (2/6 Pages) Frontier Electronics. – 10.0A GLASS PASSIVATED EFFICIENCY FAST RECTIFIERS-50-600V

Effciency Fast Rectifiers
EF10A05F THRU EF10A60F
Formosa MS
10.0A Glass Passivated
Effciency Fast Rectifiers-50-600V
Features
• Reverse recovery time less than 25ns
• High current capability.
• Low reverse leakage current.
• High surge capability.
• Glass passivated chip junction.
• Low forward drop down voltage.
• High reliability.
• Lead-free parts meet RoHS requirments.
• Suffix "-H" indicates Halogen free parts, ex. ΕF10A05F-H.
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• Case : JEDEC ITO-220AC molded plastic body over
passivated chip
• Lead : Axial leads, solderable per MIL-STD-202,
Method 208 guranteed
• Polarity: As marked
• Mounting Position : Any
• Weight : Approximated 1.70 gram
Package outline
ITO-220AC
0.406(10.3)
0.381(9.7)
0.134(3.4)
0.118(3.0)
1
0.035(0.9)
0.011(0.3)
0.272(6.9)
0.248(6.3)
2
0.161(4.1)MAX
0.189(4.8)
0.165(4.2)
0.130(3.3)
0.099(2.5)
0.606(15.4)
0.583(14.8)
0.548(13.9)
0.512(13.0)
PIN1
PIN2
0.110(2.8)
0.091(2.3)
0.032(0.8)MAX
Dimensions in inches and (millimeters)
Maximum ratings (AT T_A=25^oC unless otherwise noted)
PARAMETER
SYMBOLS EF10A05F
Maximum repetitive peak reverse voltage
VRRM
50
EF10A10F EF10A20F EF10A40F EF10A60F _UNIT
100
200
400
600
V
Maximum RMS voltage
VRMS
35
70
140
280
420
V
Maximum DC blocking voltage
VDC
50
100
200
400
600
V
Maximum average forward rectified current
IO
10.0
A
Peak forward surge current 8.3ms
single half sine-wave(JEDEC method)
IFSM
Typical diode junction capacitance (Note 1)
CJ
Operating junction temperature range
TJ
Storage temperature range
TSTG
100
A
60
pF
-55 to +150
°C
-65 to +175
°C
Electrical characteristics (AT T_A=25^oC unless otherwise noted)
PARAMETER
SYMBOLS EF10A05F EF10A10F EF10A20F _EF10A40F EF10A60F _UNIT
Maximum forward voltage at IF=10.0A
VF
0.98
1.30
1.75
V
Maximum DC reverse current
at rated DC blocking voltage
at TJ =25°C
at TJ =125°C
IR
5.0
uA
250
uA
Maximum reverse recovery time (Note 2)
trr
25
ns
Thermal characteristics
PARAMETER
SYMBOLS EF10A05F EF10A10F EF10A20F _EF10A40F EF10A60F _UNIT
Typical thermal resistance junction to case
RθJC
2.0
°C/W
Note 1: Measure at 1 MHz and applied reverse voltage of 4.0 V D.C.
Note 2: Reverse recovery time test condition, IF=0.5A, IR=1.0A, IRR=0.25A
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Page 2
Document ID
DS-222507
Issued Date
2008/02/10
Revised Date
2015/07/06
Revision
C
Page.
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