BAT42WS_10 Datasheet, PDF (2/7 Pages) Formosa MS – 200mA Surface Mount Small Signal Schottky Diodes-30V

Small Signal Schottky Diode
BAT42WS / BAT43WS
Formosa MS
200mA Surface Mount Small Signal
Schottky Diodes-30V
Features
• Low current rectification and high speed switching.
• Extremely small surface mount type.
• Up to 200mA current capability.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet exceeds environmental
standards of MIL-STD-19500 /228
• Suffix "-H" indicates Halogen-free part,ex.BAT42WS-H.
Mechanical data
Package outline
SOD-323F
0.071(1.80)
0.063(1.60)
0.039(1.00)
0.031(0.80)
• Epoxy:UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-323F
• Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.005 gram
0.106(2.70)
0.091(2.30)
Dimensions in inches and (millimeters)
Maximum ratings (AT T_A=25^oC unless otherwise noted)
PARAMETER
CONDITIONS
Repetitive peak reverse voltage
Continuous reverse voltage
Average rectified current
Non-repetitive peak forward surge current
Power dissipation
@t < 1.0ms
Thermal resistance
Operating temperature
Junction to ambient (Note 1)
Storage temperature
Note:1. Parts Mounted on FR-4 PC Board with recommended pad layout.
Symbol
V_RRM
V_R
I _FAV
I_FSM
P_D
R_θJA
T_J
T_STG
MIN.
-55
-65
TYP. MAX. UNIT
30 V
30 V
200 mA
4.0 A
200 mW
500 ^oC/W
+125 ^oC
+125 ^oC
Electrical characteristics (AT T_A=25^oC unless otherwise noted)
PARAMETER
CONDITIONS
Symbol MIN. TYP. MAX. UNIT
Reverse Breakdown Voltage
Forward voltage
I_R=100uA
I_F = 200 mA
I_F = 10 mA
I_F = 50 mA
I_F = 2.0 mA
I_F = 15mA
BAT42WS
BAT43WS
BAT42WS
BAT42WS
BAT43WS
BAT43WS
V_(BR)R
V_F
30
-
-
-
-
0.26
-
V
1.0
1.0
0.40
0.65
V
0.33
0.45
Total capacitance
V_R = 1.0V, f = 1.0MHz
C_T
Reverse recovery time
I_F = I_R = 10mA,Irr=0.1xIR ,R_L =100Ω
t_rr
Reverse current
V_R = 25 V
V_R = 25 V , T_J = 100^OC
I_R
10 pF
5.0 ns
0.5 _µA
100
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Page 2
Document ID Issued Date
DS-22163H 2009/08/10
Revised Date Revision
2010/03/10
B
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