SUL32-AL Datasheet, PDF (1/2 Pages) Formosa MS – Low VF Chip Schottky Barrier Diodes - Silicon epitaxial planer type

Low VF Chip Schottky Barrier Diodes
SUL32-AL
Silicon epitaxial planer type
Features
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O Utilizing Flame
Retardant Epoxy Molding Compound.
For surface mounted applications.
Exceeds environmental standards of MIL-S-19500 /
228
Low leakage current.
Mechanical data
Case : Molded plastic, JEDEC DO-214AC
Terminals : Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity : Indicated by c athode band
Mounting Position : Any
Weight : 0.0015 ounce, 0.05 gram
Formosa MS
SMA-L
0.205(5.2)
0.189(4.8)
0.012(0.3) Typ.
0.040(1.0) Typ.
0.181(4.6)
0.165(4.2)
0.110(2.8)
0.094(2.4)
0.075(1.9)
0.067(1.7)
0.040 (1.0) Typ.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (AT T _A=25 ^oC unless otherwise noted)
PARAMETER
CONDITIONS
Forward rectified current
See Fig.2
Forward surge current
Reverse current
Thermal resistance
Diode junction capacitance
Storage temperature
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
VR = VRRM TA = 25^o C
VR = VRRM TA = 100^o C
Junction to ambient
f=1MHz and applied 4vDC reverse voltage
Symbol
IO
MIN.
TYP.
MAX.
3.0
UNIT
A
IFSM
30
A
1.5
mA
IR
20
mA
RqJA
50
o_{C / w}
CJ
130
pF
TSTG
-55
+150
o_C
SYMBOLS
SUL32-AL
MARKING
CODE
L32
V_RRM ^*1
(V)
20
V_RMS ^*2
(V)
14
V_R ^*3
(V)
20
V_F ^*4
(V)
0.30
Operating
temperature
(^oC)
-55 to +125
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage