SK52-B Datasheet, PDF (1/2 Pages) Formosa MS – Chip Schottky Barrier Diodes - Silicon epitaxial planer type

Chip Schottky Barrier Diodes
SK52-B THRU SK510-B
Silicon epitaxial planer type
Features
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O Utilizing Flame
Retardant Epoxy Molding Compound.
For surface mounted applications.
Exceeds environmental standards of MIL-S-19500 /
228
Low leakage current.
0.040(1.0) Typ.
Formosa MS
SMB
0.213(5.4)
0.197(5.0)
0.173(4.4)
0.157(4.0)
0.016(0.4) Typ.
0.142(3.6)
0.126(3.2)
0.075(1.9)
0.067(1.7)
0.040 (1.0) Typ.
Mechanical data
Case : Molded plastic, JEDEC DO-214AA
Terminals : Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity : Indicated by c athode band
Mounting Position : Any
Weight : 0.00878 ounce, 0.293 gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (AT T_A=25^oC unless otherwise noted)
PARAMETER
CONDITIONS
Forward rectified current
See Fig.1
Forward surge current
Reverse current
Thermal resistance
Diode junction capacitance
Storage temperature
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
VR = VRRM TA = 25^oC
VR = VRRM TA = 125^oC
Junction to lead
f=1MHz and applied 4vDC reverse voltage
Symbol
IO
MIN.
TYP.
MAX.
5.0
UNIT
A
IFSM
150
A
1
mA
IR
50
mA
RqJL
12
o_{C / w}
CJ
380
pF
TSTG
-55
+150
o_C
SYMBOLS
SK52-B
SK53-B
SK54-B
SK55-B
SK56-B
SK58-B
SK510-B
MARKING
CODE
SS52
SS53
SS54
SS55
SS56
SS58
S510
V_RRM ^*1
(V)
20
30
40
50
60
80
100
V_RMS ^*2
(V)
14
21
28
35
42
56
70
V_R ^*3
(V)
20
30
40
50
60
80
100
V_F ^*4
(V)
0.50
0.70
0.85
Operating
temperature
(^oC)
-55 to +125
-55 to +150
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage