MBR0520-M Datasheet, PDF (1/2 Pages) Formosa MS – Chip Schottky Barrier Diodes - Silicon epitaxial planer type

Chip Schottky Barrier Diodes
Formosa MS
MBR0520-M THRU MBR05100-M
Silicon epitaxial planer type
Features
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O Utilizing Flame
Retardant Epoxy Molding Compound.
For surface mounted applications.
Exceeds environmental standards of MIL-S-19500 /
228
Low leakage current.
Mechanical data
Case : Molded plastic, JEDEC SOD-123 / MINI SMA
Terminals : Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity : Indicated by c athode band
Mounting Position : Any
Weight : 0.04 gram
SOD-123
0.161(4.1)
0.146(3.7)
0.012(0.3) Typ.
0.071(1.8)
0.055(1.4)
0.126(3.2)
0.110(2.8)
0.035(0.9) Typ.
0.063(1.6)
0.055(1.4)
0.035(0.9) Typ.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (AT T_A=25^oC unless otherwise noted)
PARAMETER
CONDITIONS
Forward rectified current
See Fig.1
Forward surge current
Reverse current
Thermal resistance
Diode junction capacitance
Storage temperature
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
VR = VRRM TA = 25^oC
VR = VRRM TA = 125^oC
Junction to ambient
f=1MHz and applied 4vDC reverse voltage
Symbol
IO
MIN.
TYP.
MAX.
0.5
UNIT
A
IFSM
15
A
0.5
mA
IR
10
mA
RqJC
98
o_{C / w}
CJ
120
pF
TSTG
-55
+150
o_C
SYMBOLS
MBR0520-M
MBR0530-M
MBR0540-M
MBR0550-M
MBR0560-M
MBR0580-M
MBR05100-M
MARKING
CODE
02
03
04
05
06
08
01
V_RRM ^*1
(V)
20
30
40
50
60
80
100
V_RMS ^*2
(V)
14
21
28
35
42
56
70
V_R ^*3
(V)
20
30
40
50
60
80
100
V_F ^*4
(V)
0.45
0.65
0.80
Operating
temperature
(^oC)
-55 to +125
-55 to +150
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage