HFM301 Datasheet, PDF (1/2 Pages) Rectron Semiconductor – SURFACE MOUNT GLASS PASSIVATED HIGH EFFICIENCY SILICON RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 3.0 Amperes)

Chip Silicon Rectifier
HFM301 THRU HFM307
Formosa MS
Ultra fast recovery type
Features
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O Utilizing Flame
Retardant Epoxy Molding Compound.
For surface mounted applications.
Exceeds environmental standards of MIL-S-19500 /
228
Low leakage current.
Mechanical data
Case : Molded plastic, JEDEC DO-214AB
Terminals : Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity : Indicated by c athode band
Mounting Position : Any
Weight : 0.00585 ounce, 0.195 gram
0.152(3.8)
0.144(3.6)
0.032(0.8) Typ.
0.040(1.0) Typ.
SMC
0.276(7.0)
0.260(6.6)
0.244(6.2)
0.228(5.8)
0.012(0.3) Typ.
0.189(4.8)
0.173(4.4)
0.087(2.2)
0.071(1.8)
0.040 (1.0) Typ.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (AT T_A=25^oC unless otherwise noted)
PARAMETER
CONDITIONS
Symbol MIN.
Forward rectified current
Ambient temperature = 55^oC
IO
Forward surge current
8.3ms single half sine-wave superimposed on
IFSM
rate load (JEDEC methode)
Reverse current
Thermal resistance
Diode junction capacitance
Storage temperature
VR = VRRM TA = 25^oC
VR = VRRM TA = 100^oC
Junction to ambient
f=1MHz and applied 4vDC reverse voltage
IR
RqJA
CJ
TSTG
-55
TYP.
15
70
MAX.
3.0
UNIT
A
100
A
10.0
300
+150
uA
uA
o_{C / w}
pF
o_C
SYMBOLS
HFM301
HFM302
HFM303
HFM304
HFM305
HFM306
HFM307
MARKING
CODE
H31
H32
H33
H34
H35
H36
H37
V _RRM ^*1 V _RMS ^*2
(V)
(V)
50
35
100
70
200
140
300
210
400
280
600
420
800
560
V _R ^*3
(V)
50
100
200
300
400
600
800
V _F ^*4
(V)
T _RR ^*5
(nS)
Operating
temperature
( ^o C)
1.0
50
-55 to +150
1.3
1.7
70
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage
*5 Reverse recovery time