HFM201-L Datasheet, PDF (1/2 Pages) Formosa MS – Chip Silicon Rectifier - Ultra fast recovery type

Chip Silicon Rectifier
Formosa MS
HFM201-L THRU HFM207-L
Ultra fast recovery type
Features
Plastic package has Underwriters Laboratory
FlammabilityClassification 94V-O Utilizing Flame
Retardant Epoxy Molding Compound.
For surface mounted applications.
Exceeds environmental standards of MIL-S-19500 /
228
Low leakage current.
Mechanical data
Case : Molded plastic, JEDEC DO-214AC
Terminals : Solder plated, s olderable per MIL-STD-750,
Method 2026
Polarity : Indicated by cathode band
Mounting Position : Any
Weight : 0.0015 ounce, 0.05 gram
SMA-L
0.205(5.2)
0.189(4.8)
0.012(0.3) Typ.
0.040(1.0) Typ.
0.181(4.6)
0.165(4.2)
0.110(2.8)
0.094(2.4)
0.075(1.9)
0.067(1.7)
0.040 (1.0) Typ.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (AT T_A=25^oC unless otherwise noted)
PARAMETER
CONDITIONS
Forward rectified current
Ambient temperature = 50^oC
Forward surge current
Reverse current
Thermal resistance
Diode junction capacitance
Storage temperature
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
VR = VRRM TA = 25^oC
VR = VRRM TA = 100^oC
Junction to ambient
f=1MHz and applied 4vDC reverse voltage
Symbol
IO
IFSM
IR
RqJA
CJ
TSTG
MIN.
-55
TYP.
20
25
MAX.
1.0
UNIT
A
50
A
5.0
150
+150
uA
uA
o_{C / w}
pF
o_C
SYMBOLS
HFM201-L
HFM202-L
HFM203-L
HFM204-L
HFM205-L
HFM206-L
HFM207-L
MARKING
CODE
H21
H22
H23
H24
H25
H26
H27
V_RRM ^*1
(V)
50
100
200
400
600
800
1000
V_RMS ^*2
(V)
35
70
140
280
420
560
700
V_R ^*3
(V)
50
100
200
400
600
800
1000
V_F ^*4
(V)
T_RR ^*5
(nS)
1.0
50
1.3
1.7
75
Operating
temperature
(^oC)
-55 to +150
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage
*5 Reverse recovery time