HFM108 Datasheet, PDF (1/2 Pages) Formosa MS – Chip Silicon Rectifier - Fast recovery type

Chip Silicon Rectifier
HFM101 thru HFM108
Fast recovery type
Features
Plastic package has Underwriters Laboratory
FlammabilityClassification 94V-O Utilizing Flame
Retardant Epoxy Molding Compound.
For surface mounted applications.
Exceeds environmental standards of MIL-S-19500 /
228
Low leakage current.
Mechanical data
Case : Molded plastic, JEDEC DO-214AC
Terminals : Solder plated, s olderable per MIL-STD-750,
Method 2026
Polarity : Indicated by cathode band
Mounting Position : Any
Weight : 0.0015 ounce, 0.05 gram
PATENT PUBLICATION NO. 37116
SMA
0.185(4.8)
0.177(4.4)
0.012(0.3) Typ.
0.110(2.8)
0.094(2.4)
0.165(4.2)
0.150(3.8)
0.040(1.0) Typ.
0.067(1.7)
0.060(1.5)
0.040 (1.0) Typ.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (AT T_A=25^oC unless otherwise noted)
PARAMETER
CONDITIONS
Forward rectified current
Ambient temperature = 50^oC
Forward surge current
Reverse current
Thermal resistance
Diode junction capacitance
Storage temperature
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
VR = VRRM TA = 25^oC
VR = VRRM TA = 100^oC
Junction to ambient
f=1MHz and applied 4vDC reverse voltage
Symbol
IO
MIN.
TYP.
MAX.
1.0
UNIT
A
IFSM
30
A
IR
RqJA
CJ
TJ
-55
5.0
uA
150
uA
32
o_{C / w}
20
pF
+150
o_C
SYMBOLS
HFM101
HFM102
HFM103
HFM104
HFM105
HFM106
HFM107
HFM108
MARKING
CODE
H11
H12
H13
H14
H15
H16
H17
H18
V_RRM ^*1
(V)
50
100
200
300
400
600
800
1000
V_RMS ^*2
(V)
35
70
140
210
280
420
560
700
V_R ^*3
(V)
50
100
200
300
400
600
800
1000
V_F ^*4
(V)
T_RR ^*5
(nS)
1.0
50
1.3
1.85
70
Operating
temperature
(^oC)
-55 to +150
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage
*5 Reverse recovery time