HFM101 Datasheet, PDF (1/2 Pages) Rectron Semiconductor – SURFACE MOUNT GLASS PASSIVATED HIGH EFFICIENCY SILICON RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere)

Chip Silicon Rectifier
HFM101 THRU HFM107
Formosa MS
Ultra fast recovery type
Features
Plastic package has Underwriters Laboratory
FlammabilityClassification 94V-O Utilizing Flame
Retardant Epoxy Molding Compound.
For surface mounted applications.
Exceeds environmental standards of MIL-S-19500 /
228
Low leakage current.
Mechanical data
Case : Molded plastic, JEDEC DO-214AC
Terminals : Solder plated, s olderable per MIL-STD-750,
Method 2026
Polarity : Indicated by cathode band
Mounting Position : Any
Weight : 0.0015 ounce, 0.05 gram
SMA
0.185(4.8)
0.177(4.4)
0.012(0.3) Typ.
0.110(2.8)
0.094(2.4)
0.165(4.2)
0.150(3.8)
0.040(1.0) Typ.
0.067(1.7)
0.060(1.5)
0.040 (1.0) Typ.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (AT T_A=25^oC unless otherwise noted)
PARAMETER
CONDITIONS
Symbol MIN.
Forward rectified current
Ambient temperature = 50^oC
IO
Forward surge current
8.3ms single half sine-wave superimposed on
IFSM
rate load (JEDEC methode)
Reverse current
Thermal resistance
Diode junction capacitance
Storage temperature
VR = VRRM TA = 25^oC
VR = VRRM TA = 100^oC
Junction to ambient
f=1MHz and applied 4vDC reverse voltage
IR
RqJA
CJ
TSTG
-55
TYP.
32
20
MAX.
1.0
UNIT
A
30
A
5.0
150
+150
uA
uA
o_{C / w}
pF
o_C
SYMBOLS
HFM101
HFM102
HFM103
HFM104
HFM105
HFM106
HFM107
MARKING
CODE
H11
H12
H13
H14
H15
H16
H17
V_RRM ^*1
(V)
50
100
200
300
400
600
800
V_RMS ^*2
(V)
35
70
140
210
280
420
560
V_R ^*3
(V)
50
100
200
300
400
600
800
V_F ^*4
(V)
T_RR ^*5
(nS)
1.0
50
1.3
1.7
75
Operating
temperature
(^oC)
-55 to +150
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage
*5 Reverse recovery time