HFM101-MH Datasheet, PDF (1/2 Pages) Formosa MS – Chip Silicon Rectifier - Ultra fast recovery type

Chip Silicon Rectifier
Formosa MS
HFM101-MH THRU HFM107-MH
Ultra fast recovery type
Features
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O Utilizing Flame
Retardant Epoxy Molding Compound.
For surface mounted applications.
Exceeds environmental standards of MIL-S-19500 /
228
Low leakage current.
Mechanical data
Case : Molded plastic, JEDEC SOD-123H
Terminals : Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity : Indicated by c athode band
Mounting Position : Any
Weight : 0.0393 gram
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.055(1.4)
0.031(0.8) Typ.
0.035(0.9)
0.028(0.7)
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (AT T_A=25^oC unless otherwise noted)
PARAMETER
CONDITIONS
Forward rectified current
Ambient temperature = 50^oC
Forward surge current
Reverse current
Thermal resistance
Diode junction capacitance
Storage temperature
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
VR = VRRM TA = 25^oC
VR = VRRM TA = 100^oC
Junction to ambient
f=1MHz and applied 4vDC reverse voltage
Symbol
IO
MIN.
TYP.
MAX.
1.0
UNIT
A
IFSM
25
A
IR
RqJA
CJ
TSTG
-55
5.0
uA
150
uA
42
o_{C / w}
20
pF
+150
o_C
SYMBOLS
HFM101-MH
HFM102-MH
HFM103-MH
HFM104-MH
HFM105-MH
HFM106-MH
HFM107-MH
MARKING
CODE
H1
H2
H3
H4
H5
H6
H7
V_RRM ^*1
(V)
50
100
200
400
600
800
1000
V_RMS ^*2
(V)
35
70
140
280
420
560
700
V_R ^*3
(V)
50
100
200
400
600
800
1000
V_F ^*4
(V)
T_RR ^*5
(nS)
1.0
50
1.3
1.7
75
Operating
temperature
(^oC)
-55 to +150
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage
*5 Reverse recovery time