HFM101-M Datasheet, PDF (1/2 Pages) Formosa MS – Ultra fast recovery type

Chip Silicon Rectifier
Formosa MS
HFM101-M THRU HFM107-M
Ultra fast recovery type
Features
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O Utilizing Flame
Retardant Epoxy Molding Compound.
For surface mounted applications.
Exceeds environmental standards of MIL-S-19500 /
228
Low leakage current.
Mechanical data
Case : Molded plastic, JEDEC SOD-123 / MINI SMA
Terminals : Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity : Indicated by c athode band
Mounting Position : Any
Weight : 0.04 gram
SOD-123
0.161(4.1)
0.146(3.7)
0.012(0.3) Typ.
0.071(1.8)
0.055(1.4)
0.110(2.8)
0.094(2.4)
0.035(0.9) Typ.
0.063(1.6)
0.055(1.4)
0.035(0.9) Typ.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (AT T_A=25^oC unless otherwise noted)
PARAMETER
CONDITIONS
Symbol MIN.
Forward rectified current
Ambient temperature = 50^oC
IO
Forward surge current
8.3ms single half sine-wave superimposed on
IFSM
rate load (JEDEC methode)
Reverse current
Thermal resistance
Diode junction capacitance
Storage temperature
VR = VRRM TA = 25^oC
VR = VRRM TA = 100^oC
Junction to ambient
f=1MHz and applied 4vDC reverse voltage
IR
RqJA
CJ
TSTG
-55
TYP.
42
20
MAX.
1.0
UNIT
A
30
A
5.0
150
+150
uA
uA
o_{C / w}
pF
o_C
SYMBOLS
HFM101-M
HFM102-M
HFM103-M
HFM104-M
HFM105-M
HFM106-M
HFM107-M
MARKING
CODE
H1
H2
H3
H4
H5
H6
H7
V_RRM ^*1 V_RMS ^*2
(V)
(V)
50
35
100
70
200
140
300
210
400
280
600
420
800
560
V_R ^*3
(V)
50
100
200
300
400
600
800
V_F ^*4
(V)
T_RR ^*5
(nS)
Operating
temperature
(^o C)
1.0
50
-55 to +150
1.3
1.7
75
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage
*5 Reverse recovery time