FM820-T Datasheet, PDF (1/2 Pages) Formosa MS – Chip Schottky Barrier Diodes - Silicon epitaxial planer type

Chip Schottky Barrier Diodes
FM820-T THRU FM840-T
Silicon epitaxial planer type
Features
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O Utilizing Flame
Retardant Epoxy Molding Compound.
For surface mounted applications.
Exceeds environmental standards of MIL-S-19500 /
228
Low leakage current.
0.152(3.8)
0.144(3.6)
0.032(0.8) Typ.
0.040(1.0) Typ.
Formosa MS
SMC-T
0.276(7.0)
0.260(6.6)
0.244(6.2)
0.228(5.8)
0.012(0.3) Typ.
0.189(4.8)
0.173(4.4)
0.087(2.2)
0.071(1.8)
0.040 (1.0) Typ.
Mechanical data
Case : Molded plastic, JEDEC DO-214AB
Terminals : Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity : Indicated by c athode band
Mounting Position : Any
Weight : 0.00585 ounce, 0.195 gram
Dimensions in inches and (millimeters)
o
MAXIMUM RATINGS (AT TA=25 C unless otherwise noted)
PARAMETER
CONDITIONS
Forward rectified current
See Fig.1
Forward surge current
Reverse current
Thermal resistance
Diode junction capacitance
Storage temperature
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
V_R = V_RRM T_A = 25^oC
V_R = V_RRM T_A = 100^oC
Junction to ambient
f=1MHz and applied 4vDC reverse voltage
Symbol
I_O
MIN.
TYP.
MAX.
8.0
UNIT
A
I_FSM
150
A
5.0
mA
I_R
50
mA
Rq_JA
55
o_{C / w}
C_J
700
pF
T_STG
-55
+150
o_C
SYMBOLS
FM820-T
FM830-T
FM840-T
MARKING
CODE
SS82
SS83
SS84
V_RRM ^*1
(V)
20
30
40
V_RMS ^*2
(V)
14
21
28
V_R ^*3
(V)
20
30
40
V_F ^*4
(V)
0.65
Operating
temperature
(^oC)
-55 to +125
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage