FM5822V-A Datasheet, PDF (1/2 Pages) Formosa MS – Chip Schottky Barrier Diodes - Silicon epitaxial planer type

Chip Schottky Barrier Diodes
FM5822V-A
Silicon epitaxial planer type
Features
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O Utilizing Flame
Retardant Epoxy Molding Compound.
For surface mounted applications.
Exceeds environmental standards of MIL-S-19500 /
228
Low leakage current.
Mechanical data
Case : Molded plastic, JEDEC DO-214AC
Terminals : Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity : Indicated by c athode band
Mounting Position : Any
Weight : 0.0015 ounce, 0.05 gram
Formosa MS
SMA
0.185(4.8)
0.177(4.4)
0.012(0.3) Typ.
0.110(2.8)
0.094(2.4)
0.165(4.2)
0.150(3.8)
0.040(1.0) Typ.
0.067(1.7)
0.060(1.5)
0.040 (1.0) Typ.
Dimensions in inches and (millimeters)
MARKING CODE : SK34
MAXIMUM RATINGS (AT T_A=25^oC unless otherwise noted)
PARAMETER
CONDITIONS
Repetitive peak reverse voltage
RMS voltage
Continuous reverse voltage
Forward rectified current
Ambient temperature = 80^oC
Forward surge current
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
Thermal resistance
Diode junction capacitance
Operating temperature
Storage temperature
Junction to ambient
f=1MHz and applied 4vDC reverse voltage
Symbol MIN.
VRRM
VRMS
VR
IO
TYP.
MAX.
40
28
40
3.0
UNIT
V
V
V
A
IFSM
RqJA
CJ
TJ
-50
TSTG
-50
80
A
55
250
+125
+150
o_{C / w}
pF
o_C
o_C
ELECTRICAL CHARACTERISTICS (AT T_A=25^oC unless otherwise noted)
PARAMETER
CONDITIONS
Symbol MIN. TYP. MAX. UNIT
Forward voltage
Reverse current
IF = 1.0 AMPERE DC
VF
VR = Peak reverse voltage TA = 25^oC
IR
VR = Peak reverse voltage TA = 100^oC
0.40
V
0.5
mA
20
mA