FM5822-A Datasheet, PDF (1/2 Pages) Formosa MS – Chip Schottky Barrier Diodes - Silicon epitaxial planer type

Chip Schottky Barrier Diodes
FM5822-A
Silicon epitaxial planer type
Features
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O Utilizing Flame
Retardant EpoxyMolding Compound.
For surface mounted applications.
Exceeds environmental standards of MIL-S-19500 /
228
Low leakage current.
Mechanical data
Case : Molded plastic, JEDEC DO-214AC
Terminals : Solder plated, s olderable per MIL-STD-750,
Method 2026
Polarity : Indicated by cathode band
Mounting Position : Any
Weight : 0.0015 ounce, 0.15 gr am
Formosa MS
SMA
0.185(4.8)
0.173(4.4)
0.012(0.3) Typ.
0.110(2.8)
0.094(2.4)
0.165(4.2)
0.150(3.8)
0.040(1.0) Typ.
0.067(1.7)
0.060(1.5)
0.040 (1.0) Typ.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (AT T_A=25^oC unless otherwise noted)
PARAMETER
CONDITIONS
Forward rectified current
Forward voltage
See Fig.1
IF = 1 A , TA = 25^oC
IF = 2 A , TA = 25^oC
IF = 1 A , TA = 125^oC
IF = 2 A , TA = 125^oC
Symbol
IO
VF
VF
VF
VF
MIN.
Forward surge current
8.3ms single half sine-wave superimposed on
IFSM
rate load (JEDEC methode)
peak reverse voltage
RMS voltage
Continuous reverse voltage
Reverse current
Thermal resistance
Diode junction capacitance
Operating temperature
Storage temperature
VR = VRRM TA = 25^oC
VR = VRRM TA = 125^oC
Junction to ambient
f=1MHz and applied 4vDC reverse voltage
VRRM
VRMS
VR
IR
RqJA
CJ
TJ
TSTG
-55
-55
TYP.
250
MAX.
3.0
0.42
0.49
0.34
0.43
UNIT
A
V
V
V
V
80
A
40
28
40
0.5
20
80
+150
+150
V
V
V
mA
mA
o_{C / w}
pF
o_C
o_C