FM5820-B Datasheet, PDF (1/2 Pages) Formosa MS – Chip Schottky Barrier Diodes - Silicon epitaxial planer type

Chip Schottky Barrier Diodes
FM5820-B THRU FM5822-B
Silicon epitaxial planer type
Features
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O Utilizing Flame
Retardant Epoxy Molding Compound.
For surface mounted applications.
Exceeds environmental standards of MIL-S-19500 /
228
Low leakage current.
0.040(1.0) Typ.
Formosa MS
SMB
0.213(5.4)
0.197(5.0)
0.173(4.4)
0.157(4.0)
0.016(0.4) Typ.
0.142(3.6)
0.126(3.2)
0.075(1.9)
0.067(1.7)
0.040 (1.0) Typ.
Mechanical data
Case : Molded plastic, JEDEC DO-214AA
Terminals : Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity : Indicated by c athode band
Mounting Position : Any
Weight : 0.00878 ounce, 0.293 gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (AT T _A=25 ^oC unless otherwise noted)
PARAMETER
CONDITIONS
Forward rectified current
See Fig.1
Forward surge current
Reverse current
Thermal resistance
Diode junction capacitance
Operating temperature
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
VR = VRRM TA = 25^o C
VR = VRRM TA = 125^o C
Junction to ambient
f=1MHz and applied 4vDC reverse voltage
Symbol
IO
MIN.
TYP.
MAX.
3.0
UNIT
A
IFSM
80
A
0.5
mA
IR
20
mA
RqJA
55 ^o C / w
CJ
250
pF
TSTG
-55
+150
o_C
SYMBOLS
FM5820
FM5821
FM5822
MARKING
CODE
SK32
SK33
SK34
V_RRM ^*1
(V)
20
30
40
V_RMS ^*2
(V)
14
21
28
V_R ^*3
(V)
20
30
40
V_F ^*4
(V)
0.475
0.500
0.525
Storage
temperature
(^oC)
-55 to +125
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage