FM5820-ALN Datasheet, PDF (1/2 Pages) Formosa MS – Chip Schottky Barrier Diodes - Silicon epitaxial planer type

Chip Schottky Barrier Diodes
Formosa MS
FM5820-ALN THRU FM5822-ALN
Silicon epitaxial planer type
Features
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O Utilizing Flame
Retardant EpoxyMolding Compound.
For surface mounted applications.
Exceeds environmental standards of MIL-S-19500 /
228
Low leakage current.
0.040(1.0) Typ.
SMA-LN
0.205(5.2)
0.189(4.8)
0.012(0.3) Typ.
0.181(4.6)
0.165(4.2)
0.110(2.8)
0.094(2.4)
0.075(1.9)
0.067(1.7)
0.040 (1.0) Typ.
Mechanical data
Case : Molded plastic, JEDEC DO-214AC
Terminals : Solder plated, s olderable per MIL-STD-750,
Method 2026
Polarity : Indicated by cathode band
Mounting Position : Any
Weight : 0.0015 ounce, 0.15 gr am
0.067(1.7)
0.053(1.3)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (AT T_A=25^oC unless otherwise noted)
PARAMETER
CONDITIONS
Forward rectified current
See Fig.1
Forward surge current
Reverse current
Thermal resistance
Diode junction capacitance
Operating temperature
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
VR = VRRM TA = 25^oC
VR = VRRM TA = 125^oC
Junction to ambient
f=1MHz and applied 4vDC reverse voltage
Symbol
IO
IFSM
IR
RqJA
CJ
TSTG
MIN.
-55
TYP.
250
MAX.
3.0
UNIT
A
80
A
0.5
20
80
+150
mA
mA
o_{C / w}
pF
o_C
SYMBOLS
FM5820-ALN
FM5821-ALN
FM5822-ALN
MARKING
CODE
SK32
SK33
SK34
V_RRM ^*1
(V)
20
30
40
V_RMS ^*2
(V)
14
21
28
V_R ^*3
(V)
20
30
40
V_F ^*4
(V)
0.475
0.500
0.525
Storage
temperature
(^oC)
-55 to +125
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage