FM520 Datasheet, PDF (1/2 Pages) Formosa MS – Chip Schottky Barrier Diodes - Silicon epitaxial planer type

Chip Schottky Barrier Diodes
FM520 THRU FM5100
Silicon epitaxial planer type
Features
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O Utilizing Flame
Retardant EpoxyMolding Compound.
For surface mounted applications.
Exceeds environmental standards of MIL-S-19500 /
228
Low leakage current.
0.152(3.8)
0.144(3.6)
0.032(0.8) Typ.
0.040(1.0) Typ.
Formosa MS
SMC
0.276(7.0)
0.260(6.6)
0.244(6.2)
0.228(5.8)
0.012(0.3) Typ.
0.189(4.8)
0.173(4.4)
0.087(2.2)
0.071(1.8)
0.040 (1.0) Typ.
Mechanical data
Case : Molded plastic, JEDEC DO-214AB
Terminals : Solder plated, s olderable per MIL-STD-750,
Method 2026
Polarity : Indicated by cathode band
Mounting Position : Any
Weight : 0.00585 ounce, 0.195 gr am
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (AT T_A=25^oC unless otherwise noted)
PARAMETER
CONDITIONS
Forward rectified current
See Fig.1
Forward surge current
Reverse current
Thermal resistance
Diode junction capacitance
Storage temperature
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
VR = VRRM TA = 25^oC
VR = VRRM TA = 125^oC
Junction to ambient
f=1MHz and applied 4vDC reverse voltage
Symbol
IO
IFSM
IR
RqJA
CJ
TSTG
MIN.
-55
TYP.
15
380
MAX.
5.0
UNIT
A
150
A
0.5
50
+150
mA
mA
o_{C / w}
pF
o_C
SYMBOLS
FM520
FM530
FM540
FM550
FM560
FM580
FM5100
MARKING
CODE
SS52
SS53
SS54
SS55
SS56
SS58
S510
V_RRM ^*1
(V)
20
30
40
50
60
80
100
V_RMS ^*2
(V)
14
21
28
35
42
56
70
V_R ^*3
(V)
20
30
40
50
60
80
100
V_F ^*4
(V)
0.55
0.70
0.85
Operating
temperature
(^oC)
-55 to +125
-55 to +150
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage