FM120-N Datasheet, PDF (1/2 Pages) Formosa MS – Chip Schottky Barrier Diodes - Silicon epitaxial planer type

Chip Schottky Barrier Diodes
FM120-N THRU FM160-N
Formosa MS
Silicon epitaxial planer type
Features
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O Utilizing Flame
Retardant Epoxy Molding Compound.
For surface mounted applications.
Exceeds environmental standards of MIL-S-19500 /
228
Low leakage current.
Mechanical data
Case : Molded plastic, JEDEC SOD-323
Terminals : Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity : Indicated by c athode band
Mounting Position : Any
Weight : 0.04 gram
SOD-323
0.106 (2.7)
0.090 (2.3)
0.012(0.3) Typ.
0.053 (1.35)
0.045 (1.15)
0.035(0.9) Typ.
0.044 (1.1)
0.035 (0.9)
0.035(0.9) Typ.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (AT T _A=25 ^oC unless otherwise noted)
PARAMETER
CONDITIONS
Forward rectified current
See Fig.1
Forward surge current
Reverse current
Thermal resistance
Diode junction capacitance
Storage temperature
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
VR = VRRM TA = 25^o C
VR = VRRM TA = 125^o C
Junction to ambient
f=1MHz and applied 4vDC reverse voltage
Symbol
IO
MIN.
TYP.
MAX.
1.0
UNIT
A
IFSM
30
A
0.5
mA
IR
10
mA
RqJC
90
o_{C / w}
CJ
120
pF
TSTG
-55
+150
o_C
SYMBOLS
FM120-N
FM130-N
FM140-N
FM150-N
FM160-N
MARKING
CODE
12
13
14
15
16
V_RRM ^*1
(V)
20
30
40
50
60
V_RMS ^*2
(V)
14
21
28
35
42
V_R ^*3
(V)
20
30
40
50
60
V_F ^*4
(V)
0.55
0.70
Operating
temperature
(^oC)
-55 to +125
-55 to +150
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage