DSR1A Datasheet, PDF (1/2 Pages) Microdiode Electronics (Jiangsu) Co.,Ltd. – SUFACE MOUNT GENERAL PURPOSE SILICON RECTIFIER

SUFACE MOUNT GENERAL PURPOSE SILICON RECTIFIER
DSR1A THRU DSR1M
Reverse Voltage - 50 to 1000 Volts Forward Current - 1.0 Ampere
Formosa MS
SOD-123FL
Cathode Band
Top View
2.80.1
0.60.25
3.70.2
Dimensions in millimeters
FEATURES
Glass passivated device
Ideal for surface mouted applications
Low reverse leakage
Metallurgically bonded construction
High temperature soldering guaranteed:
250 C/10 seconds,0.375”(9.5mm) lead length,
5 lbs. (2.3kg) tension
MECHANICAL DATA
Case : JEDEC SOD-123FL molded plastic body over
passivated chip
Terminals: Plated axial leads, solderable per MIL-STD-750,
Method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight :0.0007 ounce, 0.02 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at TA=65 C (NOTE 1)
SYMBOLS
MARK
VRRM
VRMS
VDC
DSR1A
A1
50
35
50
DSR1B
A2
100
70
100
I(AV)
DSR1D
A3
200
140
200
DSR1G
A4
400
280
400
DSR1J
A5
600
420
600
1.0
Peak forward surge current
8.3ms single half sine-wave superimposed on
IFSM
20.0
rated load (JEDEC Method) TL=25 C
Maximum instantaneous forward voltage at 1.0A
VF
1.1
Maximum DC reverse current TA=25 C
5.0
at rated DC blocking voltage TA=125 C
IR
50.0
Typical junction capacitance (NOTE 2)
CJ
Typical thermal resistance (NOTE 3)
RθJA
Operating junction and storage temperature range TJ,TSTG
4
180
-55 to +150
Note: 1.Averaged over any 20ms period.
2.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
3.Thermal resistance from junction to ambient at 0.375” (9.5mm)lead length,P.C.B. mounted
DSR1K
A6
800
560
800
DSR1M
A7
1000
700
1000
UNITS
VOLTS
VOLTS
VOLTS
Amp
Amps
Volts
µA
pF
K/W
C
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Page 1
Document ID Issued Date
DS-222645 2008/02/10
Revised Date Revision
2010/03/10
B
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