BAS16 Datasheet, PDF (1/2 Pages) Fairchild Semiconductor – Small Signal Diode

Switching Diode
BAS16
Silicon epitaxial planar type
Features
Low power loss, high efficiency
High reliability
High speed ( t_rr < 4 ns )
Mechanical data
Case : Glass, SOT-23
Terminals : Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity: Indicated by cathode band
Mounting Position : Any
Formosa MS
SOT-23
(B)
(C)
(A)
0.055 (1.40)
0.047 (1.20)
0.102 (2.60)
0.094 (2.40)
0.028 (0.70)
0.020 (0.50)
0.045 (1.15)
0.033 (0.85)
R 0.05
(0.002)
Dimensionsininchesand(millimeters)
MAXIMUM RATINGS (AT T_A=25^oC unless otherwise noted)
PARAMETER
CONDITIONS
Non-Repetitive peak reverse voltage
Reverse voltage
Peak forward surge current
Repetitive peak forward voltage
tp= 1 us
Forward current
Average forward current
Power dissipation
VR = 0
Junction temperature
Storage temperature
Symbol MIN.
VRM
VR
IFSM
IFRM
IF
IFAV
PV
Tj
TSTG
-55
TYP.
MAX.
100
75
2.0
500
300
200
350
125
+125
UNIT
V
V
A
mA
mA
mA
mW
o_C
o_C
ELECTRICAL CHARACTERISTICS (AT T_A=25^oC unless otherwise noted)
PARAMETER
CONDITIONS
Symbol MIN.
Forward voltage
Reverse current
Breakdown current
Diode capacitance
Rectification efficiency
Reverse recovery time
IF = 5mA
IF = 10mA
VR = 75V
IR = 100uA , TP/T = 0.01 TP = 0.3ms
VR = 0 , f = 1MHz , VHF = 50mV
VHF = 2V , f = 100MHz
IF =10mA, VR =6V, IRR = 0.1 X IR, RL=100OHM
VF
VF
IR
V( B R )
CD
nR
tr r
0.62
100
45
TYP.
0.86
MAX.
0.72
1.00
5.0
2.0
6
UNIT
V
V
uA
V
pF
%
ns