BAL99W Datasheet, PDF (1/2 Pages) Pan Jit International Inc. – SURFACE MOUNT SWITCHING DIODES

Dual Series Switching Diode
BAL99W
BAW56W
BAV70W
BAV99W
Silicon epitaxial planar type
Features
Small surface mounting type
High reliability
High speed ( t_rr < 1.5 ns )
Mechanical data
Case : SOT-323
Terminals : Solder plated, solderable per MIL-STD-750,
Method 2026
Mounting Position : Any
Formosa MS
SOT-323
(B)
(C)
(A)
0.055 (1.40)
0.047 (1.20)
0.089 (2.30)
0.079 (2.00)
0.017 (0.43)
MIN
0.043 (1.10)
0.031 (0.80)
R 0.05
(0.002)
0.0010 (0.25)
0.0004 (0.10)
Dimensions in inches and (millimeters)
SINGLE(Alt) COMMON ANODE COMMON CATHODE SERIES
BAL99W
BAW56W
BAV70W
BAV99W
MAXIMUM RATINGS (AT T _A=25 ^oC unless otherwise noted)
PARAMETER
CONDITIONS
Symbol MIN. TYP.
Repetitive peak reverse voltage
VRRM
Reverse voltage
VR
Peak forward surge current
tp = 1 us
IFSM
Repetitive peak forward current
IFRM
Forward current
IF
Average forward current
VR = 0
IFAV
Power dissipation
PD
Junction temperature
Tj
Storage temperature
TSTG
-55
ELECTRICAL CHARACTERISTICS (AT T _A=25 ^oC unless otherwise noted)
PARAMETER
CONDITIONS
Symbol MIN. TYP.
IF = 10mA
VF
Forward voltage
IF = 150mA
VF
VR = 70V
IR
Reverse current
VR = 20V , Tj = 150 ^o C
IR
VR = 70V , Tj = 150 ^o C
IR
Breakdown current
IR = 100uA , TP /T = 0.01 TP = 0.3ms
V(BR)
70
Diode capacitance
VR = 0 , f = 1MHz , VHF = 50mV
CD
Reverse recovery time
IF =10mA, VR = 10mA, IRR = 0.1 X IR , RL =100OHM
trr
MAX.
70
70
2.0
450
215
715
225
175
+150
MAX.
0.855
1.250
2.5
30
50
1.5
6
UNIT
V
V
A
mA
mA
mA
mW
o_C
o_C
UNIT
V
V
uA
uA
uA
V
pF
ns