ASD355-N Datasheet, PDF (1/2 Pages) Formosa MS – Silicon epitaxial planar type

Advanced Switching Diode
ASD355-N
Silicon epitaxial planar type
Features
Small surface mounting type
High reliability
High speed ( t_rr < 4 ns )
Formosa MS
R0.5 (0.02) Typ.
0.106 (2.7)
0.090 (2.3)
0.012(0.3) Typ.
0.053 (1.35)
0.045 (1.15)
Mechanical data
Case : Molded plastic, JEDEC SOD-323
Terminals : Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity : Indicated by cat hode band
Mounting Position : Any
Weight : 0.000159 ounce, 0.0045 gram
0.035 (0.9)
0.028 (0.7)
SOD-323
MAXIMUM RATINGS (AT T _A=25 ^oC unless otherwise noted)
PARAMETER
CONDITIONS
Repetitive peak reverse voltage
Peak forward surge current
tp < 1s
Average forward current
VR = 0
Power dissipation
Junction temperature
Storage temperature
Symbol
VRRM
IFSM
IFAV
PV
Tj
TSTG
MIN.
-55
TYP.
MAX.
100
500.0
100
350
175
+175
UNIT
V
mA
mA
mW
o_C
o_C
ELECTRICAL CHARACTERISTICS (AT T _A=25 ^oC unless otherwise noted)
PARAMETER
CONDITIONS
Symbol MIN. TYP.
Forward voltage
IF = 10mA
VF
VR = 25V
IR
Reverse current
VR = 25V , Tj = 150 ^o C
IR
VR = 80V
IR
Breakdown current
IR = 100uA , TP /T = 0.01 TP = 0.3ms
V(BR)
100
Diode capacitance
VR = 0 , f = 1MHz , VHF = 50mV
CD
Thermal resistance
Reverse recovery time
Junction to ambient
IF =10mA, VR =6V, IRR = 0.1 X IR , RL =100OHM
R _th JA
trr
MAX.
1.2
100
50
30
4.0
4
UNIT
V
nA
uA
uA
V
pF
K/mW
ns