1N914 Datasheet, PDF (1/2 Pages) NXP Semiconductors – High-speed diode

Switching Diode
1N914
Silicon epitaxial planar type
Features
Low power loss, high efficiency
High reliability
High speed ( t_rr < 4 ns )
Mechanical data
Case : Glass, DO-35
Terminals : Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity: Indicated by cathode band
Mounting Position : Any
Weight : 0.13 gram
Formosa MS
DO-35
.083(2.10)
.051(1.30)
DIA.
1.141(29.0)
1.102(28.0)
.169(4.30)
.146(3.70)
.022(.55)
.018(.45)
DIA.
1.141(29.0)
1.102(28.0)
Dimensionsininchesand(millimeters)
MAXIMUM RATINGS (AT T_A=25^oC unless otherwise noted)
PARAMETER
CONDITIONS
Non-Repetitive peak reverse voltage
Reverse voltage
Peak forward surge current
Repetitive peak forward voltage
tp= 1 us
Forward current
Average forward current
Power dissipation
VR = 0
Junction temperature
Storage temperature
Symbol MIN.
VRM
VR
IFSM
IFRM
IF
IFAV
PV
Tj
TSTG
-55
TYP.
MAX.
100
75
1.0
250
150
75
250
175
+175
UNIT
V
V
A
mA
mA
mA
mW
o_C
o_C
ELECTRICAL CHARACTERISTICS (AT T_A=25^oC unless otherwise noted)
PARAMETER
CONDITIONS
Symbol MIN. TYP.
Forward voltage
IF = 5mA
IF = 10mA
VF
0.62
VF
0.86
VR = 20V
IR
Reverse current
VR = 20V , Tj = 150 ^oC
IR
VR = 75V
IR
Breakdown current
IR = 100uA , TP/T = 0.01 TP = 0.3ms
V(BR)
100
Diode capacitance
VR = 0 , f = 1MHz , VHF = 50mV
CD
Rectification efficiency
VHF = 2V , f = 100MHz
nR
45
IF = IR = 10mA , IRR = 1mA
trr
Reverse recovery time
IF =10mA, VR =6V, IRR = 0.1 X IR, RL=100OHM
trr
MAX.
0.72
1.00
25
50
5.0
4.0
8
4
UNIT
V
V
nA
uA
uA
V
pF
%
ns
ns