XPDV21X0RA Datasheet, PDF (1/5 Pages) Finisar Corporation. – 50 GHz Photodetector

Product Specification
50 GHz Photodetector
XPDV21x0(RA)
PRODUCT FEATURES
 50 GHz electrical 3 dB bandwidth
 Excellent flat response within 3 dB
bandwidth
 Impressive pulse behavior
 Well matched 50 Ω output
 Unique on-chip integrated bias network
APPLICATIONS
 Communication system at 40 Gb/s
 High-speed lightwave characterization
 Microwave photonics up to 60 GHz
The XPDV21x0(RA) platform exhibits an optimized frequency response in both, power and phase. It
is ideally suited for OC-768/STM-256 long haul systems. The on-chip integrated bias network with an
optimized RF design in particular, ensures an undisturbed frequency response from DC to the 3 dB
cut-off frequency and saves costs for internal bias-tees. The module is especially designed for optimal
RF performance; therefore the pulse response reveals virtually no ringing. A further advantage of the
waveguide structure is the unbeatable high-power behavior. The photodetector shows a linear response
up to an optical input power of 10 dBm, resulting in a high output voltage swing avoiding the need for
electrical amplification.
ORDERING INFORMATION
XPDV21x0vv-Vy-zz
x: 2
= standard PDL
5
= low PDL
vv: blank = no internal 50 Ω termination
R
= internal 50 Ω termination, DC-coupled
RA = internal 50 Ω termination, AC-coupled
Vy: F
M
= V connector^® female (standard)
= V connector^® male
zz: FP = FC/PC (standard)
other connectors available upon request
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