LPD200SOT343 Datasheet, PDF (1/2 Pages) Filtronic Compound Semiconductors – PACKAGED HIGH DYNAMIC RANGE PHEMT

PRELIMINARY DATA SHEET _LPD200SOT343
PACKAGED HIGH DYNAMIC RANGE PHEMT
• FEATURES
♦ 0.6 dB Noise Figure at 2 GHz
♦ 15.5 dBm P-1dB 2 GHz, 16.5 dBm at 6 GHz
♦ 21 dB Power Gain at 2 GHz, 10.5 dB at 6GHz
♦ 50% Power-Added-Efficiency at 2 GHz
• DESCRIPTION AND APPLICATIONS
The LPD200 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs)
Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-
write 0.25 µm by 200 µm Schottky barrier gate. The recessed “mushroom” Ti/Pt/Au gate structure
minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have
been optimized for high dynamic range. The LPD200’s active areas are passivated with Si₃N₄, and
the SOT343 (also known as SC-70) package is ideal for low-cost, high-performance applications that
require a surface-mount package.
The LPD200SOT343 is designed for commercial systems for use in low noise amplifiers and
oscillators operating over the RF and Microwave frequency ranges. The low noise figure makes it
appropriate for use in receivers in MMDS and GPS. This device is also suitable as a driver stage for
WLAN and ISM band spread spectrum applications.
• ELECTRICAL SPECIFICATIONS @ T_Ambient = 25°C
Parameter
Saturated Drain-Source Current
Power at 1-dB Compression
Power Gain at 1-dB
Compression
Power-Added Efficiency
Symbol
I_DSS
P-1dB
G-1dB
PAE
Noise Figure
NF
Transconductance
Gate-Source Leakage Current
Pinch-Off Voltage
Gate-Source Breakdown
Voltage Magnitude
Gate-Drain Breakdown
Voltage Magnitude
G_M
I_GSO
V_P
|V_BDGS|
|V_BDGD|
Test Conditions
V_DS = 2 V; V_GS = 0 V
f=2GHz; V_DS = 3 V; I_DS = 50% I_DSS
f=2GHz; V_DS = 3 V; I_DS = 50% I_DSS
f=2GHz; V_DS = 3 V; I_DS = 50% I_DSS;
P_OUT = 19.5 dBm
f=2GHz; V_DS = 3V; I_DS = 25% I_DSS
f=2GHz; V_DS = 5V; I_DS = 50% I_DSS
V_DS = 2 V; V_GS = 0 V
V_GS = -5 V
V_DS = 2 V; I_DS = 1 mA
I_GS = 1 mA
I_GD = 1 mA
Min Typ Max Units
45
75 mA
14 15.5
dBm
20 21
dB
50
%
0.6
dB
0.8
dB
50 70
mS
1 10 µA
-0.25
-1.5 V
6
7
V
8
9
V
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Revised: 2/09/01
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