LPD200P70 Datasheet, PDF (1/3 Pages) Filtronic Compound Semiconductors – PACKAGED HIGH DYNAMIC RANGE PHEMT

LPD200P70
PACKAGED HIGH DYNAMIC RANGE PHEMT
• FEATURES
♦ 20 dBm Output Power at 1-dB Compression at 18 GHz
♦ 9.5 dB Power Gain at 18 GHz
♦ 16 dB Small Signal Gain at 2 GHz
♦ 0.8 dB Noise Figure at 2 GHz
• DESCRIPTION AND APPLICATIONS
The LPD200P70 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide
(AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an
Electron-Beam direct-write 0.25 µm by 200 µm Schottky barrier gate. The recessed “mushroom”
Ti/Pt/Au gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure
and processing have been optimized for high dynamic range. The LPD200’s active areas are
passivated with Si₃N₄, and the P70 ceramic package is ideal for low-cost, high-performance
applications that require a surface-mount package.
Typical applications include high dynamic range receiver preamplifiers for commercial applications
including Cellular/PCS systems and other types of commercial wireless systems.
• ELECTRICAL SPECIFICATIONS @ T_Ambient = 25°C*
Parameter
Symbol
Test Conditions
Min Typ Max Units
Saturated Drain-Source Current**
Power at 1-dB Compression
Power Gain at 1-dB Compression
Power-Added Efficiency
I_DSS
P-1dB
G-1dB
PAE
Noise Figure
NF
V_DS = 2 V; V_GS = 0 V
V_DS = 5 V; I_DS = 50% I_DSS
V_DS = 5 V; I_DS = 50% I_DSS
V_DS = 5 V; I_DS = 50% I_DSS;
P_IN = 11 dBm
V_DS = 3.3 V; I_DS = 25% I_DSS;
f=2 GHz
40
85 mA
19
20
dBm
8
9.5
dB
50
%
0.7
dB
Maximum Drain-Source Current
Transconductance
Gate-Source Leakage Current
Pinch-Off Voltage
Gate-Source Breakdown
Voltage Magnitude
I_MAX
G_M
I_GSO
V_P
|V_BDGS|
V_DS = 2 V; V_GS = 1 V
V_DS = 2 V; V_GS = 0 V
V_GS = -5 V
V_DS = 2 V; I_DS = 1 mA
I_GS = 1 mA
125
mA
60
80
mS
1
15 µA
-0.25 -0.8 -1.5
V
-6
-7
V
Gate-Drain Breakdown
|V_BDGD|
I_GD = 1 mA
-8
-9
V
Voltage Magnitude
*frequency=18 GHz, unless otherwise noted
**Formerly binned as: LPD200P70-1 = 40-65 mA and LPD200P70–2 = 66-85 mA
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Revised: 1/20/01
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