LPD200MX Datasheet, PDF (1/2 Pages) Filtronic Compound Semiconductors – HIGH PERFORMANCE PHEMT

PRELIMINARY DATA SHEET LPD200MX
PACKAGED HIGH DYNAMIC RANGE PHEMT
• FEATURES
♦ 1.0 dB Noise Figure at 1.8 GHz
♦ 15.5 dBm P-1dB 1.8 GHz, 17dBm@6GHz, 10.5dBm@12GHz
♦ 19 dB Power Gain at 1.8 GHz, 10dB@6GHz, 8dB@12GHz
♦ 31 dBm IP3 at 1.8 GHz
♦ 60% Power-Added-Efficiency
• DESCRIPTION AND APPLICATIONS
The LPD200 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs)
Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-
write 0.25 µm by 200 µm Schottky barrier gate. The recessed “mushroom” Ti/Pt/Au gate structure
minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have
been optimized for high dynamic range. The LPD200’s active areas are passivated with Si₃N₄, and
the micro X package is ideal for low-cost, high-performance applications that require a surface-
mount package.
The LPD200MX is designed for commercial systems for use in low noise amplifiers and oscillators
operating over the RF and Microwave frequency ranges. The low noise figure makes it appopriate
for use in receivers in MMDS and GPS. This device is also suitable as a driver stage for WLAN and
ISM band spread spectrum applications.
• ELECTRICAL SPECIFICATIONS @ T_Ambient = 25°C
Parameter
Saturated Drain-Source Current
Power at 1-dB Compression
Power Gain at 1-dB
Compression
Power-Added Efficiency
Noise Figure
Output Intercept Point
Transconductance
Gate-Source Leakage Current
Pinch-Off Voltage
Gate-Source Breakdown
Voltage Magnitude
Gate-Drain Breakdown
Voltage Magnitude
Symbol
I_DSS
P-1dB
G-1dB
Test Conditions
V_DS = 2 V; V_GS = 0 V
f=1.8GHz; V_DS = 5 V; I_DS = 50% I_DSS
f=1.8GHz; V_DS = 5 V; I_DS = 50% I_DSS
PAE
NF
IP3
G_M
I_GSO
V_P
|V_BDGS|
f=1.8GHz; V_DS = 5 V; I_DS = 50% I_DSS;
P_OUT = 19.5 dBm
f=1.8GHz; V_DS = 5V; I_DS = 50% I_DSS
f=1.8GHz; V_DS = 3V; I_DS = 25% I_DSS
f=1.8GHz; V_DS = 5V; I_DS = 50% I_DSS;
P_OUT = 4 dBm
V_DS = 2 V; V_GS = 0 V
V_GS = -5 V
V_DS = 2 V; I_DS = 1 mA
I_GS = 1 mA
|V_BDGD|
I_GD = 1 mA
Min
45
14
18
50
-0.25
6
8
Typ Max Units
75 mA
15.5
dBm
19
dB
60
%
1.4
dB
1.0
31
dBm
70
mS
1 10 µA
-1.5 V
7
V
9
V
Phone: [phone]
Fax: [phone]
http:// www.filss.com
Revised: 5/02/01
Email: [e-mail]