LPA6836V Datasheet, PDF (1/3 Pages) Filtronic Compound Semiconductors – MEDIUM POWER PHEMT WITH SOURCE VIAS

Preliminary Data Sheet
LPA6836V
MEDIUM POWER PHEMT WITH SOURCE VIAS
• FEATURES
♦ 25 dBm Output Power at 1-dB
Compression at 18 GHz
♦ 9.5 dB Power Gain at 18 GHz
♦ 55% Power-Added Efficiency
♦ Source Vias to Backside Metallization
DRAIN
BOND
PAD
GATE
BOND
PAD
• DESCRIPTION AND APPLICATIONS
DIE SIZE: 15.4X14.2 mils (390x360 µm)
DIE THICKNESS: 3.9 mils (100 µm)
BONDING PADS: 3.0X3.0 mils (75x75 µm)
The FPA6836V is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs)
Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-
write 0.25 µm by 360 µm Schottky barrier gate. The recessed “mushroom” gate structure minimizes
parasitic gate-source and gate resistances. The epitaxial structure and processing have been
optimized for high dynamic range.
Typical applications include high dynamic range driver stages for commercial applications including
wireless infrastructure systems, broad bandwidth amplifiers, and optical systems.
Source vias have been added for improved performance and assembly convenience. Each via hole
has 0.02 nH of inductance. Additionally, the via holes remove the need for source bond wires,
meaning only two bond wires are required for assembly. Because the via connects the source pad to
the backside metallization, self-bias configurations should be designed with caution.
• ELECTRICAL SPECIFICATIONS @ T_Ambient = 25°C
Parameter
Saturated Drain-Source Current
Power at 1-dB Compression
Power Gain at 1-dB Compression
Power-Added Efficiency
Maximum Drain-Source Current
Transconductance
Gate-Source Leakage Current
Pinch-Off Voltage
Gate-Source Breakdown
Voltage Magnitude
Gate-Drain Breakdown
Voltage Magnitude
Thermal Resistivity
frequency=18 GHz
Symbol
I_DSS
P-1dB
G-1dB
PAE
I_MAX
G_M
I_GSO
V_P
|V_BDGS|
|V_BDGD|
Θ_JC
Test Conditions
V_DS = 2 V; V_GS = 0 V
V_DS = 8 V; I_DS = 50% I_DSS
V_DS = 8 V; I_DS = 50% I_DSS
V_DS = 8 V; I_DS = 50% I_DSS
V_DS = 2 V; V_GS = 1 V
V_DS = 2 V; V_GS = 0 V
V_GS = -5 V
V_DS = 2 V; I_DS = 2 mA
I_GS = 2 mA
I_GD = 2 mA
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Min Typ Max Units
80 115 125 mA
24
25
dBm
8.5 9.5
dB
55
%
190
mA
75 100
mS
1
10 µA
-0.25 -1.2 -2.0 V
11
15
V
12
16
V
100
°C/W
Revised: 2/22/02
Email: [e-mail]