LP7612 Datasheet, PDF (1/2 Pages) Filtronic Compound Semiconductors – HIGH DYNAMIC RANGE PHEMT

LP7612
HIGH DYNAMIC RANGE PHEMT
• FEATURES
♦ 21 dBm Output Power at 1-dB
Compression at 18 GHz
♦ 9.5 dB Power Gain at 18 GHz
♦ 1.0 dB Noise Figure at 18 GHz
♦ 55% Power-Added Efficiency
DRAIN
BOND
PAD (2X)
GATE
BOND
PAD (2X)
SOURCE
BOND
PAD (2x)
• DESCRIPTION AND APPLICATIONS
DIE SIZE: 18.0X13.0 mils (460x330 µm)
DIE THICKNESS: 3.9 mils (100 µm)
BONDING PADS: 1.9X1.9 mils (50x50 µm)
The LP7612 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs)
Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-
write 0.25 µm by 200 µm Schottky barrier gate. The recessed “mushroom” gate structure minimizes
parasitic gate-source and gate resistances. The epitaxial structure and processing have been
optimized for high dynamic range. The LP7612 also features Si₃N₄ passivation and is available in a
P70 ceramic package.
Typical applications include high dynamic range receiver preamplifiers for commercial applications
including Cellular/PCS systems, WLL and WLAN systems, and broadband amplifiers.
• ELECTRICAL SPECIFICATIONS @ T_Ambient = 25°C
Parameter
Symbol
Test Conditions
Saturated Drain-Source Current
Power at 1-dB Compression
Power Gain at 1-dB Compression
Power-Added Efficiency
Maximum Drain-Source Current
Transconductance
Gate-Source Leakage Current
Pinch-Off Voltage
Gate-Source Breakdown
Voltage Magnitude
Gate-Drain Breakdown
Voltage Magnitude
Thermal Resistivity
frequency=18 GHz
I_DSS
P-1dB
G-1dB
PAE
I_MAX
G_M
I_GSO
V_P
|V_BDGS|
|V_BDGD|
Θ_JC
V_DS = 2 V; V_GS = 0 V
V_DS = 5 V; I_DS = 50% I_DSS
V_DS = 5 V; I_DS = 50% I_DSS
V_DS = 5 V; I_DS = 50% I_DSS
V_DS = 2 V; V_GS = 1 V
V_DS = 2 V; V_GS = 0 V
V_GS = -5 V
V_DS = 2 V; I_DS = 1 mA
I_GS = 1 mA
I_GD = 1 mA
Min Typ Max Units
40
65
85 mA
19
21
dBm
8
9.5
dB
55
%
125
mA
60
90
mS
1
10 µA
-0.25 -0.8 -1.5
V
-6
-7
V
-8
-9
V
275
°C/W
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Revised: 1/18/01
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