LP7512 Datasheet, PDF (1/2 Pages) Filtronic Compound Semiconductors – ULTRA LOW NOISE PHEMT

• FEATURES
♦ 0.6 dB Noise Figure at 12 GHz
♦ 12 dB Associated Gain at 12 GHz
♦ Low DC Power Consumption
♦ Excellent Phase Noise
DRAIN
BOND
PAD (2X)
GATE
BOND
PAD (2X)
SOURCE
BOND
PAD (2x)
LP7512
ULTRA LOW NOISE PHEMT
• DESCRIPTION AND APPLICATIONS
DIE SIZE: 18.0X13.0 mils (460x330 µm)
DIE THICKNESS: 3.9 mils (100 µm)
BONDING PADS: 1.9X1.9 mils (50x50 µm)
The LP7512 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs)
Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-
write 0.25 µm by 200 µm Schottky barrier gate. The recessed “mushroom” gate structure minimizes
parasitic gate-source and gate resistances. The epitaxial structure and processing have been
optimized for ultra low noise and usable gain to 40 GHz. The LP7512 also features Si₃N₄
passivation and is available in a variety of packages.
Typical applications include low noise receiver preamplifiers for commercial applications including
wireless systems and radio link systems.
• ELECTRICAL SPECIFICATIONS @ T_Ambient = 25°C
Parameter
Symbol
Test Conditions
Min Typ Max Units
Saturated Drain-Source Current I_DSS
V_DS = 2 V; V_GS = 0 V
15
35
50 mA
Noise Figure
NF
V_DS = 2 V; I_DS = 25% I_DSS; f=12 GHz
f=18 GHz
0.6 0.9 dB
1.0 1.4 dB
Associated Gain at minimum
G_A
V_DS = 2 V; I_DS = 25% I_DSS; f=12 GHz
9
10
dB
NF
f=18 GHz 7.5 8.5
dB
Transconductance
G_M
Gate-Source Leakage Current
I_GSO
V_DS = 2 V; V_GS = 0 V
V_GS = -3 V
60
90
mS
1
10 µA
Gate-Drain Leakage Current
I_GDO
V_GD = -3 V
1
10 µA
Pinch-Off Voltage
V_P
V_DS = 2 V; I_DS = 1 mA
-0.25 -0.8 -1.5
V
Thermal Resistivity
Θ_JC
frequency=18 GHz
325
°C/W
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Revised: 1/18/01
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