LP750P100 Datasheet, PDF (1/3 Pages) Filtronic Compound Semiconductors – PACKAGED 0.5 WATT POWER PHEMT

LP750P100
PACKAGED 0.5 WATT POWER PHEMT
• FEATURES
♦ 41 dBm IP3 at 12 GHz
♦ 27.5 dBm P-1dB at 12 GHz
♦ 10.5 dB Power Gain at 12 GHz
♦ 2.5 dB Noise Figure at 12 GHz
♦ 60% Power-Added-Efficiency
• DESCRIPTION AND APPLICATIONS
The LP750P100 is a packaged Aluminum Gallium Arsenide/Indium Gallium Arsenide
(AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an
Electron-Beam direct-write 0.25 µm Schottky barrier gate. The recessed “mushroom” gate structure
minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have
been optimized for reliable high-power/low-noise applications. The LP750 also features Si₃N₄
passivation and is available in die form or in surface-mount packages.
The LP750P100 is designed for medium-power, linear amplification. This device is suitable for
applications in commercial and military environments, and it is appropriate to be used as a medium
power transistor in SATCOM uplink transmitters, medium-haul digital radio transmitters, PCS high
efficiency amplifiers, and WLL systems.
• ELECTRICAL SPECIFICATIONS @ T_Ambient = 22 ± 3 °C
Parameter
Symbol
Test Conditions
Min Typ Max Units
Output Power @
1 dB Compression
P_1dB
f = 12GHz; V_DS = 8V; I_DS = 50% I_DSS 26.0 27.5
dBm
Power Gain @
G_1dB f = 12GHz; V_DS = 8V; I_DS = 50% I_DSS 9.0 10.5
dB
1 dB Compression
Maximum Available Gain
MAG f = 12GHz; V_DS = 8V; I_DS = 50% I_DSS
14.0
dB
Noise Figure
NF
f = 12GHz; V_DS = 5V; I_DS = 33% I_DSS
2.5
dB
Power-Added Efficiency
η
f = 12GHz; V_DS = 5V; I_DS = 50% I_DSS;
60
%
P_OUT = 25dBm
Output Intercept Point
IP₃
f = 12GHz; V_DS = 8V; I_DS = 50% I_DSS;
41
P_OUT = 10dBm
dBm
Saturated Drain-Source Current I_DSS
V_DS = 2V; V_GS = 0V
180
265 mA
Transconductance
G_M
V_DS = 2V; V_GS = 0V
230 280
mS
Pinch-Off Voltage
V_P
V_DS = 2V; I_DS = 4mA
-2.0 -1.2 -0.25 V
Gate-Drain Breakdown
Voltage Magnitude
|V_BDGD|
I_GD = 4mA
12 15
V
Gate-Source Breakdown
Voltage Magnitude
|V_BDGS|
I_GS = 4mA
12 16
V
Gate-Source Leakage
Current Magnitude
|I_GSL|
V_GS = -5V
5
45
µA
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Revised: 03/02/01
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