LP6872P100 Datasheet, PDF (1/2 Pages) Filtronic Compound Semiconductors – Packaged 0.5W Power PHEMT

Filtronic
Solid State
FEATURES
• +27 dBm Typical Power at 15 GHz
• 11 dB Typical Power Gain at 15 GHz
• Low Intermodulation Distortion
• 50% Power-Added-Efficiency
• Color-coded by I_DSS range
LP6872P100
Packaged 0.5W Power PHEMT
GATE
SOURCE
DRAIN
DESCRIPTION AND APPLICATIONS
The LP6872P100 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic
High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 µm by 720 µm Schottky barrier
gate. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances. The epitaxial
structure and processing have been optimized for reliable high-power applications. The LP6872 also features Si₃N₄
passivation and is available in die form.
Typical applications include commercial and military high-performance power amplifiers, including SATCOM uplink
transmitters, and medium-haul digital radio transmitters. Space level screening to FSS JANS grade is also available.
The LP6872-P100 may be procured in a variety of grades, depending upon specific user requirements. Standard lot
screening is patterned after MIL-STD-19500, JANC grade.
PERFORMANCE SPECIFICATIONS (T_A = 25°C)
SYMBOLS PARAMETERS
I_DSS
P_1dB
G_1dB
η_ADD
I_MAX
G_M
V_P
I_GSO
BV_GS
BV_GD
Saturated Drain-Source Current LP6872-P100-1 BLUE
V_DS = 2V V_GS = 0V
LP6872-P100-2 GREEN
LP6872-P100-3 RED
Output Power at 1dB Gain Compression
V_DS = 8.0V, I_DS = 50% I_DSS
f = 15 GHz
Power Gain at 1dB Gain Compression
V_DS = 8.0V, I_DS = 50% I_DSS
f = 15 GHz
Power-Added Efficiency
Maximum Drain-Source Current
Transconductance
V_DS = 2V V_GS = +1V
V_DS = 2V V_GS = 0V
Pinch-Off Voltage
V_DS = 2V I_DS = 4mA
Gate-Source Leakage Current
V_GS = -5V
Gate-Source Breakdown Voltage
I_GS = 4mA
Gate-Drain Breakdown Voltage
I_GD = 4mA
MIN TYP MAX UNITS
180 195 206 mA
207 220 233
234 245 260
25.5 27.0
dBm
8.0
9.5
dB
50
%
385
mA
170 220
mS
-0.25 -1.2 -2.0
V
10
50
µA
-12
-15
V
-12
-16
V
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