LP6836SOT343 Datasheet, PDF (1/2 Pages) Filtronic Compound Semiconductors – PACKAGED MEDIUM POWER PHEMT

PRELIMINARY DATA SHEET _LP6836SOT343
PACKAGED MEDIUM POWER PHEMT
• FEATURES
♦ 0.5 dB Noise Figure at 2 GHz
♦ 19 dBm P-1dB 2 GHz, 19 dBm at 6 GHz
♦ 20 dB Power Gain at 2 GHz, 10 dB at 6 GHz
♦ 70% Power-Added-Efficiency
• DESCRIPTION AND APPLICATIONS
The LP6836SOT343 is a packaged AlGaAs/InGaAs/AlGaAs pseudomorphic high electron mobility
transistor (pHEMT) intended for applications requiring medium output power and/or high dynamic
range. It utilizes a 0.25 µm x 360 µm Schottky barrier gate, defined by electron-beam
photolithography. The LP6836’s active areas are passivated with Si₃N₄, and the SOT343 (also
known as SC-70) package is ideal for low-cost, high-performance applications that require a surface-
mount package.
The LP6836SOT343 is designed for commercial systems for use in low noise amplifiers and
oscillators operating over the RF and Microwave frequency ranges. The low noise figure makes it
appropriate for use in receivers in MMDS and GPS. This device is also suitable as a driver stage for
WLAN and ISM band spread spectrum applications.
• ELECTRICAL SPECIFICATIONS @ T_Ambient = 25°C
Parameter
Saturated Drain-Source Current
Power at 1-dB Compression
Power Gain at 1-dB
Compression
Power-Added Efficiency
Symbol
I_DSS
P-1dB
G-1dB
PAE
Noise Figure
NF
Transconductance
Gate-Source Leakage Current
Pinch-Off Voltage
Gate-Source Breakdown
Voltage Magnitude
Gate-Drain Breakdown
Voltage Magnitude
G_M
I_GSO
V_P
|V_BDGS|
|V_BDGD|
Test Conditions
V_DS = 2 V; V_GS = 0 V
f=2GHz; V_DS = 3 V; I_DS = 50% I_DSS
f=2GHz; V_DS = 3 V; I_DS = 50% I_DSS
f=2GHz; V_DS = 3 V; I_DS = 50% I_DSS;
P_OUT = 19.5 dBm
f=2GHz; V_DS = 3V; I_DS = 25% I_DSS
f=2GHz; V_DS = 3V; I_DS = 50% I_DSS
V_DS = 2 V; V_GS = 0 V
V_GS = -5 V
V_DS = 2 V; I_DS = 2 mA
I_GS = 2 mA
I_GD = 2 mA
Min Typ Max Units
80
125 mA
18 19
dBm
18 20
dB
70
%
0.5
dB
0.7
dB
75 100
mS
1 10 µA
-0.25
-2.0 V
11 15
V
12 16
V
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Revised: 1/20/01
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