LP6836P70 Datasheet, PDF (1/3 Pages) Filtronic Compound Semiconductors – PACKAGED MEDIUM POWER PHEMT

LP6836P70
PACKAGED MEDIUM POWER PHEMT
• FEATURES
♦ 23 dBm Output Power at 1-dB Compression at 15 GHz
♦ 11.5 dB Power Gain at 15 GHz
♦ 50% Power-Added Efficiency
• DESCRIPTION AND APPLICATIONS
The LP6836P70 is a packaged AlGaAs/InGaAs/AlGaAs pseudomorphic high electron mobility
transistor (pHEMT) intended for applications requiring medium output power and/or high dynamic
range. It utilizes a 0.25 µm x 360 µm Schottky barrier gate, defined by electron-beam
photolithography.
Typical applications include pre-drivers in commercial wireless infrastructure and radio link high-
performance power amplifiers.
• ELECTRICAL SPECIFICATIONS @ T_Ambient = 25°C*
Parameter
Symbol
Test Conditions
Min Typ Max Units
Saturated Drain-Source Current**
Power at 1-dB Compression
Power Gain at 1-dB Compression
I_DSS
P-1dB
G-1dB
V_DS = 2 V; V_GS = 0 V
V_DS = 5 V; I_DS = 50% I_DSS
V_DS = 5 V; I_DS = 50% I_DSS
80
125 mA
22
23
dBm
10.5 12
dB
Power-Added Efficiency
PAE
Maximum Drain-Source Current
I_MAX
V_DS = 5 V; I_DS = 50% I_DSS;
P_IN = 20 dBm
V_DS = 2 V; V_GS = 1 V
50
%
190
mA
Transconductance
G_M
Gate-Source Leakage Current
I_GSO
V_DS = 2 V; V_GS = 0 V
V_GS = -5 V
70
95
mS
1
15 µA
Pinch-Off Voltage
V_P
V_DS = 2 V; I_DS = 2 mA
-0.25 -0.8 -2.0
V
Gate-Source Breakdown
|V_BDGS|
I_GS = mA
-11 -15
V
Voltage Magnitude
Gate-Drain Breakdown
|V_BDGD|
I_GD = 2 mA
-12 -16
V
Voltage Magnitude
*frequency=15 GHz, unless otherwise noted
**Formerly binned as: LP6836P70-1 = 80-95 mA, LP6836P70–2 = 96-105 mA, and LP6836P70-3 = 106-125 mA
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Revised: 1/22/01
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