LP6836P100 Datasheet, PDF (1/2 Pages) Filtronic Compound Semiconductors – Packaged 0.25W Power PHEMT

Filtronic
Solid State
FEATURES
• +24.5 dBm Typical Power at 15 GHz
• 12 dB Typical Power Gain at 15 GHz
• Low Intermodulation Distortion
• 55% Power-Added-Efficiency
• Color-coded by I_DSS range
LP6836P100
Packaged 0.25W Power PHEMT
GATE
SOURCE
DRAIN
DESCRIPTION AND APPLICATIONS
The LP6836P100 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic
High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 µm by 360 µm Schottky barrier
gate. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances. The epitaxial
structure and processing have been optimized for reliable high-power applications. The LP6836 also features Si₃N₄
passivation and is available in die form, or P70 packages. Packages are color-coded by I_DSS range.
Typical applications include commercial and military high-performance power amplifiers, including SATCOM uplink
transmitters, and medium-haul digital radio transmitters.
The LP6836P100 may be procured in a variety of grades, depending upon specific user requirements. Standard lot
screening is patterned after MIL-STD-19500, JANC grade. Space level screening to FSS JANS grade is also available.
PERFORMANCE SPECIFICATIONS (T_A = 25°C)
SYMBOLS PARAMETERS
I_DSS
P_1dB
G_1dB
η_ADD
I_MAX
Saturated Drain-Source Current
LP6836-P100-1 Blue
V_DS = 2V V_GS = 0V
LP6836-P100-2 Green
LP6836-P100-3 Red
Output Power at 1dB Gain Compression
V_DS = 8.0V, I_DS = 50% I_DSS
f = 15 GHz
Power Gain at 1dB Gain Compression
V_DS = 8.0V, I_DS = 50% I_DSS
f = 15 GHz
Power-Added Efficiency
Maximum Drain-Source Current
V_DS = 2V V_GS = +1V
G_M
Transconductance
V_DS = 2V V_GS = 0V
V_P
Pinch-Off Voltage
V_DS = 2V I_DS = 2mA
I_GSO
Gate-Source Leakage Current
V_GS = -5V
BV_GS
Gate-Source Breakdown Voltage
I_GS = 2mA
BV_GD
Gate-Drain Breakdown Voltage
I_GD = 2mA
MIN TYP MAX UNITS
80
90
95
mA
96
100 105
106 115 125
23.5 24.5
dBm
8.5
9.5
dB
55
%
190
mA
70
95
mS
-0.25 -0.8 -1.5
V
1
15
µA
-11 -15
V
-12 -16
V
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