LP6836 Datasheet, PDF (1/2 Pages) Filtronic Compound Semiconductors – MEDIUM POWER PHEMT

• FEATURES
♦ 25 dBm Output Power at 1-dB
Compression at 18 GHz
♦ 9.5 dB Power Gain at 18 GHz
♦ 55% Power-Added Efficiency
DRAIN
BOND
PAD
SOURCE
BOND
PAD (2x)
LP6836
MEDIUM POWER PHEMT
GATE
BOND
PAD
• DESCRIPTION AND APPLICATIONS
DIE SIZE: 14.2X13.0 mils (360x330 µm)
DIE THICKNESS: 3.9 mils (100 µm)
BONDING PADS: 1.9X1.9 mils (50x50 µm)
The LP6836 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs)
Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-
write 0.25 µm by 360 µm Schottky barrier gate. The recessed “mushroom” gate structure minimizes
parasitic gate-source and gate resistances. The epitaxial structure and processing have been
optimized for high dynamic range. The LP6836 also features Si₃N₄ passivation and is available in
P70 and SOT343 package types.
Typical applications include high dynamic range driver stages for commercial applications including
wireless infrastructure systems and broad bandwidth amplifiers.
• ELECTRICAL SPECIFICATIONS @ T_Ambient = 25°C
Parameter
Saturated Drain-Source Current
Power at 1-dB Compression
Power Gain at 1-dB Compression
Power-Added Efficiency
Maximum Drain-Source Current
Transconductance
Gate-Source Leakage Current
Pinch-Off Voltage
Gate-Source Breakdown
Voltage Magnitude
Gate-Drain Breakdown
Voltage Magnitude
Thermal Resistivity
frequency=18 GHz
Symbol
I_DSS
P-1dB
G-1dB
PAE
I_MAX
G_M
I_GSO
V_P
|V_BDGS|
|V_BDGD|
Θ_JC
Test Conditions
V_DS = 2 V; V_GS = 0 V
V_DS = 8 V; I_DS = 50% I_DSS
V_DS = 8 V; I_DS = 50% I_DSS
V_DS = 8 V; I_DS = 50% I_DSS
V_DS = 2 V; V_GS = 1 V
V_DS = 2 V; V_GS = 0 V
V_GS = -5 V
V_DS = 2 V; I_DS = 2 mA
I_GS = 2 mA
I_GD = 2 mA
Min Typ Max Units
80 115 125 mA
24
25
dBm
8.5 9.5
dB
55
%
190
mA
75 100
mS
1
10 µA
-0.25 -1.2 -2.0
V
-11 -15
V
-12 -16
V
100
°C/W
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Revised: 1/18/01
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