LP3000 Datasheet, PDF (1/2 Pages) Filtronic Compound Semiconductors – 2 W POWER PHEMT

• FEATURES
♦ 33.5 dBm Output Power
at 1-dB Compression at 18 GHz
♦ 7 dB Power Gain at 18 GHz
♦ 30.5 dBm Output Power
at 1-dB Compression at 3.3V
♦ 45% Power-Added Efficiency
DRAIN
BOND
PAD (4X)
SOURCE
BOND
PAD (2x)
GATE
BOND
PAD (4X)
LP3000
2 W POWER PHEMT
• DESCRIPTION AND APPLICATIONS
DIE SIZE: 28.3X16.5 mils (720x420 µm)
DIE THICKNESS: 2.6 mils (65 µm)
BONDING PADS: 1.9X2.4 mils (50x60 µm)
The LP3000 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs)
Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-
write 0.25 µm by 3000 µm Schottky barrier gate. The recessed “mushroom” gate structure
minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have
been optimized for reliable high-power applications. The LP3000 is also available in a P100 flanged
ceramic package and in the low cost plastic SOT89 package.
Typical applications include commercial and other high-performance power amplifiers.
• ELECTRICAL SPECIFICATIONS @ T_Ambient = 25°C
Parameter
Saturated Drain-Source Current
Power at 1-dB Compression
Power Gain at 1-dB Compression
Power-Added Efficiency
Maximum Drain-Source Current
Transconductance
Gate-Source Leakage Current
Pinch-Off Voltage
Gate-Source Breakdown
Voltage Magnitude
Gate-Drain Breakdown
Voltage Magnitude
Thermal Resistivity
frequency=18 GHz
Symbol
I_DSS
P-1dB
G-1dB
PAE
I_MAX
G_M
I_GSO
V_P
|V_BDGS|
|V_BDGD|
Θ_JC
Test Conditions
V_DS = 2 V; V_GS = 0 V
V_DS = 8 V; I_DS = 50% I_DSS
V_DS = 8 V; I_DS = 50% I_DSS
V_DS = 8 V; I_DS = 50% I_DSS
V_DS = 2 V; V_GS = 1 V
V_DS = 2 V; V_GS = 0 V
V_GS = -5 V
V_DS = 2 V; I_DS = 10 mA
I_GS = 15 mA
I_GD = 15 mA
Min
800
33
4
725
-0.25
-12
Typ
1060
33.5
6
45
1700
900
15
-1.2
-15
Max
1100
125
-2.0
Units
mA
dBm
dB
%
mA
mS
µA
V
V
-12 -16
V
20
°C/W
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Revised: 1/18/01
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