LP1500 Datasheet, PDF (1/2 Pages) Filtronic Compound Semiconductors – 1W POWER PHEMT

• FEATURES
♦ 31.5 dBm Output Power at 1-dB Compression at 18 GHz
♦ 8 dB Power Gain at 18 GHz
♦ 28 dBm Output Power at 1-dB Compression at 3.3V
♦ 45dBm Output IP3 at 18GHz
♦ 50% Power-Added Efficiency
DRAIN
BOND
PAD (2X)
SOURCE
BOND
PAD (2x)
GATE
BOND
PAD (2X)
LP1500
1W POWER PHEMT
• DESCRIPTION AND APPLICATIONS
DIE SIZE: 16.5X16.1 mils (420x410 µm)
DIE THICKNESS: 3 mils (75 µm)
BONDING PADS: 1.9X2.4 mils (50x60 µm)
The LP1500 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs)
Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-
write 0.25 µm by 1500 µm Schottky barrier gate. The recessed “mushroom” gate structure
minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have
been optimized for reliable high-power applications. The LP1500 also features Si₃N₄ passivation
and is available in a P100 flanged ceramic package and in the low cost plastic SOT89 package.
Typical applications include commercial and other narrowband and broadband high-performance
amplifiers, including SATCOM uplink transmitters, PCS/Cellular low-voltage high-efficiency output
amplifiers, and medium-haul digital radio transmitters.
• ELECTRICAL SPECIFICATIONS @ T_Ambient = 25°C
Parameter
Saturated Drain-Source Current
Power at 1-dB Compression
Power Gain at 1-dB Compression
Output Third Intercept Point
Power-Added Efficiency
Maximum Drain-Source Current
Transconductance
Gate-Source Leakage Current
Pinch-Off Voltage
Gate-Source Breakdown
Voltage Magnitude
Gate-Drain Breakdown
Voltage Magnitude
Thermal Resistivity
frequency=18 GHz
Symbol
I_DSS
P-1dB
G-1dB
IP3
PAE
I_MAX
G_M
I_GSO
V_P
|V_BDGS|
|V_BDGD|
Θ_JC
Test Conditions
V_DS = 2 V; V_GS = 0 V
V_DS = 8 V; I_DS = 50% I_DSS
V_DS = 8 V; I_DS = 50% I_DSS
V_DS = 8 V; I_DS = 50% I_DSS
V_DS = 8 V; I_DS = 50% I_DSS
V_DS = 2 V; V_GS = 1 V
V_DS = 2 V; V_GS = 0 V
V_GS = -5 V
V_DS = 2 V; I_DS = 5 mA
I_GS = 8 mA
I_GD = 8 mA
Min Typ Max Units
375 490 600 mA
30 31.5
dBm
6
8
dB
45
dBm
50
%
925
mA
385 450
mS
10
75 µA
-0.25 -1.2 -2.0
V
-12 -15
V
-12 -16
V
45
°C/W
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http:// www.filss.com
Revised: 1/18/01
Email: [e-mail]