FPM2750QFN Datasheet, PDF (1/8 Pages) Filtronic Compound Semiconductors – LOW NOISE HIGH LINEARITY BALANCED AMPLIFIER MODULE

FPM2750QFN
LOW NOISE HIGH LINEARITY BALANCED AMPLIFIER MODULE
Datasheet v2.5
FEATURES:
• Balanced low noise amplifier module
• Excellent Noise figure: 0.4dB at 1850MHz
• Low drive current: 40mA typical (3.0V)
• Combined IP3: 36dBm (100mA)
• Combined P1dB: 23dBm (100mA)
• Small footprint: 4mm x 4mm x 0.9mm QFN
• RoHS compliant: (Directive 2002/95/EC)
PACKAGE:
GENERAL DESCRIPTION:
The FPM2750QFN is a packaged pair of
pseudomorphic High Electron Mobility
Transistors (pHEMT) specifically optimised for
balanced configuration systems. The Filtronic
0.25µm process ensures class-leading noise
performance. The use of a small footprint
plastic package allows for a cost effective total
system implementation.
TYPICAL APPLICATIONS:
• Wireless infrastructure: Tower mounted
Amplifiers and front end LNAs for
EGSM/PCS/WCDMA/UMTS base stations
• High intercept-point LNAs
ELECTRICAL SPECIFICATIONS (as measured on each device unless otherwise stated):
PARAMETER
SYMBOL
CONDITIONS
MIN TYP
MAX
UNITS
Noise Figure
Output IP3
in balanced mode
SSG in balanced mode
P1dB in balanced mode
Small Signal Gain
Power at 1dB Gain Compression
Saturated Drain-Source Current
Maximum Drain-Source Current
Transconductance
Gate-Source Leakage Current
Pinch-Off Voltage
NF
IP3
SSG
P1dB
SSG
P1dB
IDSS
IMAX
GM
IGSO
|VP|
VDS = 3.0 V; IDS = 40mA
VDS = 4.0 V; IDS = 100mA
VDS = 3.0 V; IDS = 40mA
VDS = 4.0 V; IDS = 100mA
VDS = 3.0 V; IDS = 40mA
VDS = 4.0 V; IDS = 100mA
VDS = 3.0 V; IDS = 40mA
VDS = 4.0 V; IDS = 100mA
VDS = 3.0 V; IDS = 40mA
VDS = 4.0 V; IDS = 100mA
VDS = 3.0 V; IDS = 40mA
VDS = 4.0 V; IDS = 100mA
VDS = 1.3 V; VGS = 0 V
VDS = 1.3 V; VGS ≅ +1 V
VDS = 1.3 V; VGS = 0 V
VGS = -5 V
VDS = 1.3 V; IDS = 0.75 mA
0.4
0.6
32
33
36
18.5
17.5
20
21
21.5
23.5
19.0
19.5
17.5
17.5
185
230
280
375
200
5
0.7
1.0
1.3
dB
dBm
dB
dBm
dB
dBm
mA
mA
mS
μA
V
Gate-Source Breakdown Voltage
|VBDGS|
IGS = 0.75 mA
16
Gate-Drain Breakdown Voltage
|VBDGD|
IGD = 0.75 mA
16
Thermal Resistance
ΘJC
1W dissipation, case temperature 22°C
124
Note: T_AMBIENT = 22°; RF specification measured at f= 1850MHz using CW signal (except as noted).
1
V
V
°C/W
Tel: [phone]
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: [phone]
Email: [e-mail]
Website: www.filtronic.com