FPD7612_1 Datasheet, PDF (1/4 Pages) Filtronic Compound Semiconductors – GENERAL PURPOSE PHEMT

GENERAL PURPOSE PHEMT
FPD7612
Datasheet v3.0
FEATURES:
• 20.5 dBm Output Power (P1dB)
• 13 dB Power Gain at 12 GHz
• 17 dB Maximum Stable Gain at 12 GHz
• 11 dB Maximum Stable Gain at 18 GHz
• 45% Power-Added Efficiency
LAYOUT:
GENERAL DESCRIPTION:
The FPD7612 is an AlGaAs/InGaAs
pseudomorphic High Electron Mobility
Transistor (PHEMT), featuring a 0.25 µm by
200 µm Schottky barrier gate, defined by high
-resolution stepper-based photolithography.
The recessed gate structure minimizes
parasitics to optimize performance. The
epitaxial structure and processing have been
optimized for reliable high-power applications.
ELECTRICAL SPECIFICATIONS¹:
TYPICAL APPLICATIONS:
• Narrowband and broadband high-
performance amplifiers
• SATCOM uplink transmitters
• PCS/Cellular low-voltage high-efficiency
output amplifiers
• Medium-haul digital radio transmitters
PARAMETER
Power at 1dB Gain Compression
Power Gain at P1dB
Noise FIgure
Power-Added Efficiency
Maximum Stable Gain (S21/S12)
f = 12 GHz
f = 24 GHz
Saturated Drain-Source Current
Maximum Drain-Source Current
SYMBOL
P1dB
G1dB
CONDITIONS
VDS = 5 V; IDS = 50% IDSS
VDS = 5 V; IDS = 50% IDSS
MIN TYP MAX
19
20.5
11.0 13.0
UNITS
dBm
dB
N.F. min
VDS = 5 V; IDS = 50% IDSS
1.2
dB
PAE
VDS = 5V; IDS = 50% IDSS;
POUT = P1dB
45
%
MSG
IDSS
VDS = 5 V; IDS = 50% IDSS
VDS = 1.3 V; VGS = 0 V
16
17
dB
9.5
11
45
60
75
mA
IMAX
VDS = 1.3 V; VGS ≅ +1 V
120
mA
Transconductance
Gate-Source Leakage Current
Pinch-Off Voltage
Gate-Source Breakdown Voltage
Gate-Drain Breakdown Voltage
Thermal Resistivity (see Notes)
Thermal Resistivity (see Notes)
GM
IGSO
|VP|
|VBDGS|
|VBDGD|
θJC
θJC
VDS = 1.3 V; VGS = 0 V
VGS = -5 V
VDS = 1.3 V; IDS = 0.2 mA
IGS = 0.2 mA
IGD = 0.2 mA
VDS > 3V
VDS > 6V
80
1
10
0.7
1.0
1.3
12.0 14.0
14.5 16.0
280
20
mS
µA
V
V
V
°C/W
°C/W
Note:¹ T_Ambient = 22°C; RF specifications measured at f = 12 GHz using CW signal
Tel: [phone]
1
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: [phone]
Email: [e-mail]
Website: www.filtronic.com