FPD750_1 Datasheet, PDF (1/3 Pages) Filtronic Compound Semiconductors – 0.5W POWER PHEMT

0.5W POWER PHEMT
FPD750
Datasheet v3.0
FEATURES:
• 27.5 dBm Linear Output Power at 12 GHz
• 11.5 dB Power Gain at 12 GHz
• 14.5 dB Max Stable Gain at 12 GHz
• 38 dBm Output IP3
• 50% Power-Added Efficiency
LAYOUT:
GENERAL DESCRIPTION:
The FPD750 is an AlGaAs/InGaAs
pseudomorphic High Electron Mobility
Transistor (PHEMT), featuring a 0.25 µm by
750 µm Schottky barrier gate, defined by high-
resolution stepper-based photolithography.
The double recessed gate structure minimizes
parasitics to optimize performance. The
epitaxial structure and processing have been
optimized for reliable high-power applications.
The FPD750 also features Si₃N₄ passivation
and is available in the low cost plastic SOT89
SOT343 and DFN packages.
TYPICAL APPLICATIONS:
• Narrowband and broadband high-
performance amplifiers
• SATCOM uplink transmitters
• PCS/Cellular low-voltage high-efficiency
output amplifiers
• Medium-haul digital radio transmitters
ELECTRICAL SPECIFICATIONS¹:
PARAMETER
SYMBOL
CONDITIONS
MIN TYP MAX UNITS
Power at 1dB Gain Compression
P1dB
VDS = 8 V; IDS = 50% IDSS
26.5 27.5
dBm
Maximum Stable Gain (S21/S12)
MSG
VDS = 8 V; IDS = 50% IDSS
13.5 14.5
dB
Power Gain at P1dB
G1dB
VDS = 8 V; IDS = 50% IDSS
10.5 11.5
dB
Power-Added Efficiency
PAE
VDS = 8 V; IDS = 50% IDSS; POUT = P1dB
45
Output Third-Order Intercept Point
VDS = 8V; IDS = 50% IDSS
38
IP3
(from 15 to 5 dB below P1dB)
Matched for optimal power; Tuned for best IP3
40
%
dBm
Saturated Drain-Source Current
IDSS
VDS = 1.3 V; VGS = 0 V
185
230
280
mA
Maximum Drain-Source Current
Transconductance
Gate-Source Leakage Current
Pinch-Off Voltage
Gate-Source Breakdown Voltage
Gate-Drain Breakdown Voltage
Thermal Resistivity (see Notes)
IMAX
GM
IGSO
|VP|
|VBDGS|
|VBDGD|
θ_JC
VDS = 1.3 V; VGS ≅ +1 V
VDS = 1.3 V; VGS = 0 V
VGS = -5 V
VDS = 1.3 V; IDS = 0.75 mA
IGS = 0.75 mA
IGD = 0.75 mA
VDS > 6V
370
200
10
1.0
12.0 14.0
14.5 16.0
65
mA
mS
µA
V
V
V
°C/W
Note: ¹T_Ambient = 22°C; RF specifications measured at f = 12 GHz using CW signal
Tel: [phone]
1
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: [phone]
Email: [e-mail]
Website: www.filtronic.com