FPD750SOT89_1 Datasheet, PDF (1/12 Pages) Filtronic Compound Semiconductors – LOW NOISE HIGH LINEARITY PACKAGED PHEMT

FPD750SOT89
LOW NOISE HIGH LINEARITY PACKAGED PHEMT
Datasheet 3.0
FEATURES (1.85GHZ):
• 25 dBm Output Power (P1dB)
• 18 dB Small-Signal Gain (SSG)
• 0.6 dB Noise Figure
• 39 dBm Output IP3
• 55% Power-Added Efficiency
• FPD750SOT89E: RoHS compliant
(Directive 2002/95/EC)
PACKAGE:
RoHS
9
GENERAL DESCRIPTION:
The FPD750SOT89 is a packaged depletion
mode AlGaAs/InGaAs pseudomorphic High
Electron Mobility Transistor (pHEMT). It
utilizes a 0.25 µm x 750 µm Schottky barrier
Gate, defined by high-resolution stepper-
based photolithography. The double recessed
gate structure minimizes parasitics to optimize
performance, with an epitaxial structure
designed for improved linearity over a range of
bias conditions and i/p power levels.
TYPICAL APPLICATIONS:
• Drivers or output stages in PCS/Cellular
base station transmitter amplifiers
• High intercept-point LNAs
• WLL and WLAN systems, and other types
of wireless infrastructure systems.
ELECTRICAL SPECIFICATIONS:
PARAMETER
SYMBOL
Power at 1dB Gain Compression
P1dB
Small-Signal Gain
SSG
CONDITIONS
VDS = 5 V; IDS = 50% IDSS
VDS = 5 V; IDS = 50% IDSS
MIN
23
16.5
TYP
25
18
MAX UNITS
dBm
dB
Power-Added Efficiency
Noise Figure
Output Third-Order Intercept Point
(from 15 to 5 dB below P1dB)
Saturated Drain-Source Current
PAE
NF
IP3
IDSS
VDS = 5 V; IDS = 50% IDSS;
POUT = P1dB
VDS = 5 V; IDS = 50% IDSS
VDS = 5 V; IDS = 25% IDSS
VDS = 5V; IDS = 50% IDSS
Matched for optimal power
Matched for best IP3
VDS = 1.3 V; VGS = 0 V
50
0.8
1.0
0.6
36
38
39
185
230
280
Maximum Drain-Source Current
IMAX
VDS = 1.3 V; VGS ≅ +1 V
375
Transconductance
GM
VDS = 1.3 V; VGS = 0 V
200
Gate-Source Leakage Current
IGSO
VGS = -5 V
1
15
Pinch-Off Voltage
|VP|
VDS = 1.3 V; IDS = 0.75 mA
0.7
1.0
1.3
Gate-Source Breakdown Voltage
|VBDGS|
IGS = 0.75 mA
12
16
Gate-Drain Breakdown Voltage
|VBDGD|
IGD = 0.75 mA
12
16
Thermal Resistance
RθJC
83
Note: T_AMBIENT = 22°C; RF specification measured at f = 1850 MHz using CW signal (except as noted)
%
dB
dBm
mA
mA
mS
µA
V
V
V
°C/W
1
Tel: [phone]
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: [phone]
Email: [e-mail]
Website: www.filtronic.com