FPD750SOT343_1 Datasheet, PDF (1/11 Pages) Filtronic Compound Semiconductors – LOW NOISE HIGH LINEARITY PACKAGED PHEMT

FPD750SOT343
LOW NOISE HIGH LINEARITY PACKAGED PHEMT
PACKAGE:
FEATURES (1850MHZ):
• 0.5 dB N.F.min.
• 20 dBm Output Power (P1dB)
• 16.5 dB Small-Signal Gain (SSG)
• 37 dBm Output IP3
• RoHS compliant (Directive 2002/95/EC)
Datasheet v3.0
ROHS:
9
GENERAL DESCRIPTION:
The FPD750SOT343 is a packaged depletion
mode pseudomorphic High Electron Mobility
Transistor (pHEMT). It utilizes a 0.25 µm x 750
µm Schottky barrier Gate. The Filtronic
0.25µm process ensures class-leading noise
performance. The use of a small footprint
plastic package allows for cost effective
system implementation.
TYPICAL APPLICATIONS:
• 802.11a,b,g and WiMax LNAs
• PCS/Cellular High Linearity LNAs
• Other types of wireless infrastructure systems.
TYPICAL PERFORMANCE¹:
RF PARAMETER
SYMBOL
CONDITIONS
0.9GHZ 1.85GHZ 2.6GHZ 3.5GHZ UNITS
Power at 1dB Gain Compression
OP1dB
VDS = 3.3 V; IDS = 40mA
20
19
20
20.5
dBm
Small Signal Gain
SSG
VDS = 3.3 V; IDS = 40mA
22
16.5
14
11
dB
Power-Added Efficiency
PAE
VDS = 3.3 V; IDS = 40mA
50
POUT = P1dB
Maximum Stable Gain (|S21/S12|)
MSG
VDS = 3.3 V; IDS = 40mA
24
Noise Figure
N.F.
VDS = 3.3 V; IDS = 40mA
0.5
Output Third-Order Intercept Point
OIP3
VDS = 3.3V; IDS = 40mA
32
POUT = 9 dBm per Tone
VDS = 3.3V; IDS = 80mA
35
45
45
20
18
0.6
0.7
31
31
37
35
50
%
16
dB
0.8
dB
32
dBm
38
ELECTRICAL SPECIFICATIONS²:
RF/DC PARAMETER
SYMBOL
Frequency
f
Power at 1dB Gain Compression
P1dB
Small Signal Gain
SSG
Saturated Drain-Source Current
IDSS
Transconductance
GM
Pinch-Off Voltage
|VP|
Gate-Source Breakdown Voltage
|VBDGS|
Gate-Drain Breakdown Voltage
|VBDGD|
Thermal Resistivity (see Notes)
θJC
CONDITIONS
VDS = 3.3 V; IDS = 40mA
VDS = 3.3 V; IDS = 40mA
VDS = 1.3 V; VGS = 0 V
VDS = 1.3 V; VGS = 0 V
VDS = 1.3 V; IDS = 0.75 mA
IGS = 0.75 mA
IGD = 0.75 mA
VDS > 3V
MIN
17
16
185
0.7
13
13
TYP
2.0
230
200
1.0
16
18
143
MAX
280
1.3
UNITS
GHz
dBm
dB
mA
mS
V
V
V
°C/W
Note: 1. Based on measured data taken on applications circuits. 2. All devices are 100% RF and DC tested at
2GHz with Z_S = Z_L = 50 Ohms 3. T_AMBIENT = 22°C
1
Tel: [phone]
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: [phone]
Email: [e-mail]
Website: www.filtronic.com